MOSFET

IRF840 500V 8A N-channel Power Mosfet

Specification:-

1. N-Channel Power MOSFET
2. Continuous drain current : 8A
3. Gate threshold voltage : 10V (limit = ±20V)
4. Drain to source breakdown voltage: 500V
5. Drain source resistance : 0.85 Ohms
6. Rise time and fall time : 23nS and 20nS

IRF3205 55V 110A N-channel power mosfet

Specification 

1. Type                                   N channel
2. Drain- source voltage          55V
3. Gate-source voltage            ±20V
4. Drain current                       110A
5. Power Dissipation                200W

IRF520 100V 9.2A N-channel Power Mosfet

Specifications

1. Type: N-Channel
2. Drain-Source Volt (Vds) : 100V
3. Drain-Gate Volt (Vdg) : 100V
4. Gate-Source Volt (Vgs) : 20V
5. Drain Current (Id) : 10A
6. Power Dissipation (Ptot): 70W

IRFZ44N 55V 49A To-220 N-Channel Transistor Mosfet

Specifications

• Package Type: TO-220B (Through-Hole)
• Drain-to-Source Breakdown Voltage : 55V
• Continuous Drain Current :49A
• Static Drain-to-Source On-Resistance : 17.5mΩ
• Power Dissipation: 94W
• Total Gate Charge: 63nC
• Gate Threshold Voltage : 4V

IRF540 100V 33A N-channel HEXFET Power Mosfet

Specifications

1. Type : Small signal N-Channel MOSFET
2. Continuous drain current : 33A at 25°C
3. Pulsed drain current : 110A
4. Minimum gate threshold voltage : 2V
5. The maximum gate threshold voltage : 4V
6. Gate source voltage : ±20V
7. Maximum drain-source voltage : 100V

2N7000 60V 200mA N-channel Power Mosfet pack of 2pcs

Specifications

1. Transistor polarity: N-channel
2. Drain source voltage Vds: 60V
3. Continuous drain current: 200mA
4. Mounting: through hole
5. Power dissipation: 400mW
6. Resistance: 5 ohms (Ω)
7. Package includes: 2 pieces

2N7000 60V 200mA N-channel Power Mosfets pack of 20pcs

Specifications

1. Transistor polarity : N-channel
2. Drain source voltage Vds : 60V
3. Continuous drain current : 200mA
4. Mounting : through hole
5. Power dissipation : 400mW
6. Resistance : 5 ohm (Ω)
7. Package includes : 20 pieces

IRFI630A 200V 9A N-channel Power Mosfet

Specifications

1. Type : N - channel
2. Drain-to-Source breakdown voltage : 200 V
3. Gate-to-Source voltage, max : ±20 V
4. Drain-source On-state resistance, max : 0.400 Ohm
5. Continuous drain current : 9A
6. Total gate charge : 43 nC
7. Power dissipation : 74 W

IRFS630 200V 9A N-Channel Power Mosfet

Specification:-

• Type: N - channel
• Total gate charge: 34 nC
• Continuous drain current: 9A
• Power dissipation: 35 W
• Drain-to-Source breakdown voltage: 200 V

AO3401-30V 4A P-Channel MOSFET SOT-23 Pack of 50

Specification:-

• Gate to Source Voltage: ±12V
• Power Dissipation: 1.4W 
• Number of Pins: 3
• Drain to Source Voltage: -30V
• Continuous Drain Current: 4.2 
• Input Capacitance: 645pF

P75NF758 75V 80A N-Channel Power Mosfet Pack of 5

Specification:-

• Model: P75NF758
• Type: N-Channel Power MOSFET
• Drain-to-source voltage: VDSS = 75 V
• Gate-to-source voltage: VGSS = ± 20 V
• Drain current: ID = 80 A
• Channel temperature: Tch = 150 °C
• Storage temperature: Tstg = -55 to +175 °C

SKD502T N-Channel Power MOSFET

Specification:-

• Type of Control Channel: N-Channel
• Maximum Power Dissipation (Pd): 174 W
• Maximum Drain-Source Voltage |Vds|: 85 V
• Maximum Gate-Source Voltage |Vgs|: 20 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
• Maximum Drain Current |Id|: 120 A
• Maximum Junction Temperature (Tj): 150 °C
• Total Gate Charge (Qg): 55 nC
• Rise Time (tr): 38.9 nS
• Drain-Source Capacitance (Cd): 1057 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm