MOSFET
Showing 1–12 of 105 results
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![BSS138 50V N-Channel Enhancement Mode MOSFET]()
BSS138 50V N-Channel Enhancement Mode MOSFET
Rs. 29.00Specification:-
- Drain-Source Voltage: 50 V
- Gate-Source Voltage: ± 20 V
- Drain Current Continuous: 200 mA
- Drain Current Pulsed (tp≤10µS): 800 mA
- Drain Power Dissipation: 225 mW
- Thermal Resistance, Junction to Ambient: 556°C/W
- Storage Temperature Range: -55 to +150 °C
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![IRF620 200V 5.2A N-Channel Power MOSFET (TO-220 Package)]()
IRF620 200V 5.2A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 5.2A
- Drain-Source Resistance (Rds On): 0.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 14 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
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![BSP317P P-Channel 250V 430mA 1.8W Surface Mount MOSFET SOT-223]()
BSP317P P-Channel 250V 430mA 1.8W Surface Mount MOSFET SOT-223
Rs. 500.00Specification:-
- Package: SOT-223-4 (3 Leads + Tab) / TO-261-4 / TO-261AA
- Mounting Style: SMD/SMT
- Transistor Polarity: P-Channel
- Number of Channels: 1-Channel
- Vds - Drain-Source Breakdown Voltage: 250 V
- Id - Continuous Drain Current: 430 mA
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![GM8205A Mosfet Dual N-Channel Transistor 20V SOT-23-6]()
GM8205A Mosfet Dual N-Channel Transistor 20V SOT-23-6
Rs. 500.00Specification:-
- Package: SOT-23-6
- Drain-Source Voltage: 20V
- Gate- Source Voltage: +8V
- Drain Current: 5.0A
- Drain Current: 20A
- Thermal Resistance Junction-Ambient : 78℃/W
- Thermal Resistance Junction-Case: 40℃/W
- Junction/Storage Temperature: -55~150℃
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![IRFD9113 P-Channel 60V 600mA Through Hole 4-HVMDIP MOSFET]()
IRFD9113 P-Channel 60V 600mA Through Hole 4-HVMDIP MOSFET
Rs. 500.00Specification:-
- Package: DIP4 (0.300", 7.62mm)
- Supplier Device Package: 4-HVMDIP
- Channel Type: P-Channel
- Drain to Source Voltage: 60 V
- Current - Continuous Drain: 600mA
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![P80NF55 55V 80A N-Channel Power MOSFET (TO-220 Package)]()
P80NF55 55V 80A N-Channel Power MOSFET (TO-220 Package)
Rs. 69.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 80A
- Drain-Source Resistance (Rds On): 8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 155 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 300W
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![NDS9407 P-Channel 60V 3A 2.5W Surface Mount Transistor 8-SOIC]()
NDS9407 P-Channel 60V 3A 2.5W Surface Mount Transistor 8-SOIC
Rs. 500.00Specification:-
- Package: SOIC8 (0.154", 3.90mm)
- Transistor Polarity: P-Channel
- Number of Channels: 1 Channel
- Continuous Drain Current: 3 A
- Drain-Source Breakdown Voltage: 60 V
- Drain-Source Resistance: 78 mOhms
- Gate-Source Threshold Voltage: 3 V
- Gate Charge: 22 nC
- Power Dissipation: 2.5 W
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![IRFR420TR N-Channel 500V 2.4A 2.5W 42W Surface Mount MOSFET TO-252-3]()
IRFR420TR N-Channel 500V 2.4A 2.5W 42W Surface Mount MOSFET TO-252-3
Rs. 500.00Specification:-
- Package: TO-252-3 (2 Leads + Tab) / DPAK
- Mounting Style: SMD/SMT
- Transistor Polarity: N-Channel
- Drain Source Breakdown Voltage: 500 V
- Continuous Drain Current: 2.4 A
- Gate Source Breakdown Voltage: +/- 20 V
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![HP4410DYT N-Channel 30V 10A 2.5W Surface Mount MOSFET 8-SOIC]()
HP4410DYT N-Channel 30V 10A 2.5W Surface Mount MOSFET 8-SOIC
Rs. 500.00Specification:-
- Package: SOIC8 (0.154", 3.90mm)
- Mounting Style: SMD/SMT
- Number of Channels: 1 Channel
- Power Dissipation: 2.5 W
- Drain-Source Breakdown Voltage: 30 V
- Continuous Drain Current: 10 A