MOSFET
Showing 1–12 of 105 results
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![IRFBC30 600V 3.6A N-Channel Power MOSFET (TO-220 Package)]()
IRFBC30 600V 3.6A N-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 3.6A
- Drain-Source Resistance (Rds On): 2.2Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 31 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 74W
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![IRF4905 55V 74A P-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF4905 55V 74A P-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 74A
- Drain-Source Resistance (Rds On): 20mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 180 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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![2SK1120 1000V 8A N-Channel Power MOSFET (TO-3PN Package)]()
2SK1120 1000V 8A N-Channel Power MOSFET (TO-3PN Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Collector Current (Ic): 8A
- Drain-Source Resistance (Rds On): 1.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 120 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
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![IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 169A
- Drain-Source Resistance (Rds On): 5.3mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 260 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W
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![IRFBE30 800V 4.1A N-Channel Power MOSFET (TO-220 Package)]()
IRFBE30 800V 4.1A N-Channel Power MOSFET (TO-220 Package)
Rs. 119.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 800V
- Continuous Drain Current (Id): 4.1A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 78 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 125W
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![2SK2698 500V 15A N-Channel Power MOSFET (TO-3PN Package)]()
2SK2698 500V 15A N-Channel Power MOSFET (TO-3PN Package)
Rs. 149.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 15A
- Drain-Source Resistance (Rds On): 0.35 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 150W
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![IRFP250N 200V 30A N-Channel Power MOSFET (TO-247 Package)]()
IRFP250N 200V 30A N-Channel Power MOSFET (TO-247 Package)
Rs. 79.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 30A
- Drain-Source Resistance (Rds On): 0.075 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 123 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 214W
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![2SK3569 600V 10A N-Channel Power MOSFET (TO-220F Package)]()
2SK3569 600V 10A N-Channel Power MOSFET (TO-220F Package)
Rs. 99.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 10A
- Drain-Source Resistance (Rds On): 0.54 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 42 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 45W
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![IRFP264N 250V 44A N-Channel Power MOSFET (TO-247 Package)]()
IRFP264N 250V 44A N-Channel Power MOSFET (TO-247 Package)
Rs. 148.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 44A
- Drain-Source Resistance (Rds On): 0.06 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 380W
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![IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)]()
IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)
Rs. 139.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Continuous Drain Current (Id): 3.1A
- Drain-Source Resistance (Rds On): 5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 80 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 125W
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![IRF3710 100V 57A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF3710 100V 57A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 57A
- Drain-Source Resistance (Rds On): 23mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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![IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 130A
- Drain-Source Resistance (Rds On): 7.8mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 250 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W