MOSFET

Showing 1–12 of 96 results

  • IRFP264N 250V 44A N-Channel Power MOSFET (TO-247 Package)
    Rs. 148.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): 250V
    • Continuous Drain Current (Id): 44A
    • Drain-Source Resistance (Rds On): 0.06 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 210 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 380W
  • IRFP350 400V 16A N-Channel Power MOSFET (TO-247 Package)
    Rs. 199.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 400V
    • Continuous Drain Current (Id): 16A
    • Drain-Source Resistance (Rds On): 300mOhms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 150 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 190W
  • 2SK3550 900V 10A N-Channel Power MOSFET (TO-3PF Package)
    Rs. 489.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 900V
    • Collector Current (Ic): 10A
    • Drain-Source Resistance (Rds On): 1.4Ohms
    • Gate-Source Voltage (Vgs): 30V
    • Configuration: Single
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 130W
  • IRF9520 -100V 6.8A P-Channel Power MOSFET (TO-220 Package)
    Rs. 49.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): -100V
    • Continuous Drain Current (Id): -6.8A
    • Drain-Source Resistance (Rds On): 0.48 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 18 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 48W
  • P90NF03L 30V 90A N-Channel Power MOSFET (TO-220 Package)
    Rs. 59.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): -30V
    • Continuous Drain Current (Id): -90A
    • Drain-Source Resistance (Rds On): 0.0065 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 47 nC
    • Operating Temperature Range: -65 – 175°C
    • Power Dissipation (Pd): 150W

  • IRF720 400V 3.3A N-Channel Power MOSFET (TO-220 Package)
    Rs. 29.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 400V
    • Continuous Drain Current (Id): 3.3A
    • Drain-Source Resistance (Rds On): 1.8Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 20 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 50W
  • IRFP260N 200V 50A N-Channel Power MOSFET (TO-247 Package)
    Rs. 89.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 200V
    • Continuous Drain Current (Id): 50A
    • Drain-Source Resistance (Rds On): 0.04 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 234 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 300W
  • IRF4905 55V 74A P-Channel HEXFET Power MOSFET (TO-220 Package)
    Rs. 89.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): 55V
    • Continuous Drain Current (Id): 74A
    • Drain-Source Resistance (Rds On): 20mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 180 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 200W
  • IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)
    Rs. 159.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 100V
    • Continuous Drain Current (Id): 180A
    • Drain-Source Resistance (Rds On): 4.5Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 210 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 370W
  • IRF740 400V 10A N-Channel Power MOSFET (TO-220 Package)
    Rs. 49.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 400V
    • Continuous Drain Current (Id): 10A
    • Drain-Source Resistance (Rds On): 0.54 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 53 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 134W
  • IRF3710 100V 57A N-Channel HEXFET Power MOSFET (TO-220 Package)
    Rs. 49.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 100V
    • Continuous Drain Current (Id): 57A
    • Drain-Source Resistance (Rds On): 23mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 130 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 200W
  • IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)
    Rs. 89.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 75V
    • Continuous Drain Current (Id): 130A
    • Drain-Source Resistance (Rds On): 7.8mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 250 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 330W