MOSFET
Showing 1–12 of 105 results
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![IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 180A
- Drain-Source Resistance (Rds On): 4.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 370W
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![IRFP254N 250V 23A N-Channel Power MOSFET (TO-247 Package)]()
IRFP254N 250V 23A N-Channel Power MOSFET (TO-247 Package)
Rs. 229.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 23A
- Drain-Source Resistance (Rds On): 125mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 100 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 220W
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![IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)]()
IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 6.2A
- Drain-Source Resistance (Rds On): 1.2Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 60 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 125W
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![IRF9530 100V 14A P-Channel Power MOSFET (TO-220 Package)]()
IRF9530 100V 14A P-Channel Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -100V
- Continuous Drain Current (Id): 014A
- Drain-Source Resistance (Rds On): 0.20 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 79W
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![FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)]()
FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)
Rs. 499.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 48A
- Drain-Source Resistance (Rds On): 105mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 137 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 625W
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![IRF644 250V 14A N-Channel Power MOSFET (TO-220 Package)]()
IRF644 250V 14A N-Channel Power MOSFET (TO-220 Package)
Rs. 99.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 14A
- Drain-Source Resistance (Rds On): 0.28 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 68 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 125W
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![IRFBG30 400V 5.5A N-Channel Power MOSFET (TO-220 Package)]()
IRFBG30 400V 5.5A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 5.5A
- Drain-Source Resistance (Rds On): 1Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 38 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 74W
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![IRF610 200V 3.3A N-Channel Power MOSFET (TO-220 Package)]()
IRF610 200V 3.3A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 3.3A
- Drain-Source Resistance (Rds On): 1.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 8.2 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 36W
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![IRFP22N60K 600V 22A N-Channel Power MOSFET (TO-247 Package)]()
IRFP22N60K 600V 22A N-Channel Power MOSFET (TO-247 Package)
Rs. 289.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 22A
- Drain-Source Resistance (Rds On): 0.28 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 150 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 370W
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![TC4953A P-Channel 20 V 3A Surface Mount Transistor 8-SOIC]()
TC4953A P-Channel 20 V 3A Surface Mount Transistor 8-SOIC
Rs. 500.00Specification:-
- Package: SOIC8 (0.154", 3.90mm)
- Type: P-Channel
- Mounting Type: SMD/SMT
- Drain-source voltage: -20V
- Yang source voltage: ±12
- Drain current: -3
- Drain pulse current: -1
- Operating junction temperature and storage temperature range: -50°C to150°C
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![IRF720 400V 3.3A N-Channel Power MOSFET (TO-220 Package)]()
IRF720 400V 3.3A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 3.3A
- Drain-Source Resistance (Rds On): 1.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 20 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
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![IRFP2907 75V 209A N-Channel Power MOSFET (TO-247 Package)]()
IRFP2907 75V 209A N-Channel Power MOSFET (TO-247 Package)
Rs. 499.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 209A
- Drain-Source Resistance (Rds On): 4.5mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 620 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 470W
