MOSFET
Showing 1–12 of 96 results
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IRFP264N 250V 44A N-Channel Power MOSFET (TO-247 Package)
Rs. 148.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 44A
- Drain-Source Resistance (Rds On): 0.06 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 380W
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IRFP350 400V 16A N-Channel Power MOSFET (TO-247 Package)
Rs. 199.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 16A
- Drain-Source Resistance (Rds On): 300mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 150 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 190W
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2SK3550 900V 10A N-Channel Power MOSFET (TO-3PF Package)
Rs. 489.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Collector Current (Ic): 10A
- Drain-Source Resistance (Rds On): 1.4Ohms
- Gate-Source Voltage (Vgs): 30V
- Configuration: Single
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 130W
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IRF9520 -100V 6.8A P-Channel Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -100V
- Continuous Drain Current (Id): -6.8A
- Drain-Source Resistance (Rds On): 0.48 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 18 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 48W
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P90NF03L 30V 90A N-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): -30V
- Continuous Drain Current (Id): -90A
- Drain-Source Resistance (Rds On): 0.0065 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 47 nC
- Operating Temperature Range: -65 – 175°C
- Power Dissipation (Pd): 150W
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IRF720 400V 3.3A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 3.3A
- Drain-Source Resistance (Rds On): 1.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 20 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
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IRFP260N 200V 50A N-Channel Power MOSFET (TO-247 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 50A
- Drain-Source Resistance (Rds On): 0.04 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 234 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 300W
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IRF4905 55V 74A P-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 74A
- Drain-Source Resistance (Rds On): 20mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 180 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 180A
- Drain-Source Resistance (Rds On): 4.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 370W
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IRF740 400V 10A N-Channel Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 10A
- Drain-Source Resistance (Rds On): 0.54 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 53 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 134W
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IRF3710 100V 57A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 57A
- Drain-Source Resistance (Rds On): 23mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 130A
- Drain-Source Resistance (Rds On): 7.8mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 250 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W