MOSFET
Showing 1–12 of 105 results
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IRF9Z24 60V 11A P-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -60V
- Continuous Drain Current (Id): -11A
- Drain-Source Resistance (Rds On): 0.28 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 19 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 60W
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IRF510 100V 5.6A N-Channel Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 5.6A
- Drain-Source Resistance (Rds On): 540mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 8.3 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 43W
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IRF9Z34 60V 18A P-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -60V
- Continuous Drain Current (Id): -18A
- Drain-Source Resistance (Rds On): 0.14 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 34 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 88W
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IRF9530 100V 14A P-Channel Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -100V
- Continuous Drain Current (Id): 014A
- Drain-Source Resistance (Rds On): 0.20 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 79W
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2SK2611 900V 9A N-Channel Power MOSFET (TO-3PN Package)
Rs. 119.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 1.1Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
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FDP090N10 100V 75A N-Channel Power Trench MOSFET (TO-220 Package)
Rs. 149.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 75A
- Drain-Source Resistance (Rds On): 9mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 116 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 208W
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2SK3550 900V 10A N-Channel Power MOSFET (TO-3PF Package)
Rs. 489.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Collector Current (Ic): 10A
- Drain-Source Resistance (Rds On): 1.4Ohms
- Gate-Source Voltage (Vgs): 30V
- Configuration: Single
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 130W
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BSP298E N-Channel 400V 500mA 1.8W Surface Mount MOSFET PG-TO223
Rs. 500.00Specification:-
- Package: SOT-223-4 (3 Leads + Tab) / TO-261-4 / TO-261AA
- Type: N-Channel Power MOSFET
- Drain to Source Voltage: 400 V
- Drive Voltage: 10V
- Power Dissipation (Max): 1.8W
- Operating Temperature: -55°C ~ 150°C
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IRFP350 400V 16A N-Channel Power MOSFET (TO-247 Package)
Rs. 199.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 16A
- Drain-Source Resistance (Rds On): 300mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 150 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 190W
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BUZ31 N-Channel 200V 14.5A 95W Through Hole MOSFET PG-TO220
Rs. 500.00Specification:-
- Package: TO-220-3
- Drain to Source Voltage: 200 V
- Current: Continuous Drain (Id): 14.5A (Tc)
- Drive Voltage: 5V
- Power Dissipation (Max): 95W
- Operating Temperature: -55°C ~ 150°C
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IRF530 100V 17A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 17A
- Drain-Source Resistance (Rds On): 90mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 37 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 70W
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IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 180A
- Drain-Source Resistance (Rds On): 4.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 370W