MOSFET
Showing 1–12 of 105 results
.jpg)
-
![2SK2611 900V 9A N-Channel Power MOSFET (TO-3PN Package)]()
2SK2611 900V 9A N-Channel Power MOSFET (TO-3PN Package)
Rs. 119.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 1.1Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
-
![IRFBG30 400V 5.5A N-Channel Power MOSFET (TO-220 Package)]()
IRFBG30 400V 5.5A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 5.5A
- Drain-Source Resistance (Rds On): 1Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 38 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 74W
-
![IRF9Z34 60V 18A P-Channel Power MOSFET (TO-220 Package)]()
IRF9Z34 60V 18A P-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -60V
- Continuous Drain Current (Id): -18A
- Drain-Source Resistance (Rds On): 0.14 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 34 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 88W
-
![GM8205A Mosfet Dual N-Channel Transistor 20V SOT-23-6]()
GM8205A Mosfet Dual N-Channel Transistor 20V SOT-23-6
Rs. 500.00Specification:-
- Package: SOT-23-6
- Drain-Source Voltage: 20V
- Gate- Source Voltage: +8V
- Drain Current: 5.0A
- Drain Current: 20A
- Thermal Resistance Junction-Ambient : 78℃/W
- Thermal Resistance Junction-Case: 40℃/W
- Junction/Storage Temperature: -55~150℃
-
![IRFP2907 75V 209A N-Channel Power MOSFET (TO-247 Package)]()
IRFP2907 75V 209A N-Channel Power MOSFET (TO-247 Package)
Rs. 499.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 209A
- Drain-Source Resistance (Rds On): 4.5mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 620 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 470W
-
![2SK3550 900V 10A N-Channel Power MOSFET (TO-3PF Package)]()
2SK3550 900V 10A N-Channel Power MOSFET (TO-3PF Package)
Rs. 489.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Collector Current (Ic): 10A
- Drain-Source Resistance (Rds On): 1.4Ohms
- Gate-Source Voltage (Vgs): 30V
- Configuration: Single
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 130W
-
![TC4953A P-Channel 20 V 3A Surface Mount Transistor 8-SOIC]()
TC4953A P-Channel 20 V 3A Surface Mount Transistor 8-SOIC
Rs. 500.00Specification:-
- Package: SOIC8 (0.154", 3.90mm)
- Type: P-Channel
- Mounting Type: SMD/SMT
- Drain-source voltage: -20V
- Yang source voltage: ±12
- Drain current: -3
- Drain pulse current: -1
- Operating junction temperature and storage temperature range: -50°C to150°C
-
![2SK2698 500V 15A N-Channel Power MOSFET (TO-3PN Package)]()
2SK2698 500V 15A N-Channel Power MOSFET (TO-3PN Package)
Rs. 149.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 15A
- Drain-Source Resistance (Rds On): 0.35 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 150W
-
![IRF620 200V 5.2A N-Channel Power MOSFET (TO-220 Package)]()
IRF620 200V 5.2A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 5.2A
- Drain-Source Resistance (Rds On): 0.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 14 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
-
![IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)]()
IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)
Rs. 139.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Continuous Drain Current (Id): 3.1A
- Drain-Source Resistance (Rds On): 5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 80 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 125W
-
![IRF720 400V 3.3A N-Channel Power MOSFET (TO-220 Package)]()
IRF720 400V 3.3A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 3.3A
- Drain-Source Resistance (Rds On): 1.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 20 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
-
![2SK2968 900V 10A N-Channel Power MOSFET (TO-3PN Package)]()
2SK2968 900V 10A N-Channel Power MOSFET (TO-3PN Package)
Rs. 149.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 10A
- Drain-Source Resistance (Rds On): 1.25 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
