MOSFET
Showing 1–12 of 105 results
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![IRF720 400V 3.3A N-Channel Power MOSFET (TO-220 Package)]()
IRF720 400V 3.3A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 3.3A
- Drain-Source Resistance (Rds On): 1.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 20 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
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![2SK2611 900V 9A N-Channel Power MOSFET (TO-3PN Package)]()
2SK2611 900V 9A N-Channel Power MOSFET (TO-3PN Package)
Rs. 119.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 1.1Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
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![IRFP2907 75V 209A N-Channel Power MOSFET (TO-247 Package)]()
IRFP2907 75V 209A N-Channel Power MOSFET (TO-247 Package)
Rs. 499.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 209A
- Drain-Source Resistance (Rds On): 4.5mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 620 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 470W
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![IRF9Z34 60V 18A P-Channel Power MOSFET (TO-220 Package)]()
IRF9Z34 60V 18A P-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -60V
- Continuous Drain Current (Id): -18A
- Drain-Source Resistance (Rds On): 0.14 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 34 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 88W
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![2SK2698 500V 15A N-Channel Power MOSFET (TO-3PN Package)]()
2SK2698 500V 15A N-Channel Power MOSFET (TO-3PN Package)
Rs. 149.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 15A
- Drain-Source Resistance (Rds On): 0.35 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 150W
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![2SK3550 900V 10A N-Channel Power MOSFET (TO-3PF Package)]()
2SK3550 900V 10A N-Channel Power MOSFET (TO-3PF Package)
Rs. 489.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Collector Current (Ic): 10A
- Drain-Source Resistance (Rds On): 1.4Ohms
- Gate-Source Voltage (Vgs): 30V
- Configuration: Single
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 130W
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![2SK2968 900V 10A N-Channel Power MOSFET (TO-3PN Package)]()
2SK2968 900V 10A N-Channel Power MOSFET (TO-3PN Package)
Rs. 149.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 10A
- Drain-Source Resistance (Rds On): 1.25 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
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![IRF620 200V 5.2A N-Channel Power MOSFET (TO-220 Package)]()
IRF620 200V 5.2A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 5.2A
- Drain-Source Resistance (Rds On): 0.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 14 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
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![IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)]()
IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)
Rs. 139.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Continuous Drain Current (Id): 3.1A
- Drain-Source Resistance (Rds On): 5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 80 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 125W
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![IRFP350 400V 16A N-Channel Power MOSFET (TO-247 Package)]()
IRFP350 400V 16A N-Channel Power MOSFET (TO-247 Package)
Rs. 199.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 16A
- Drain-Source Resistance (Rds On): 300mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 150 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 190W
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![BUZ31 N-Channel 200V 14.5A 95W Through Hole MOSFET PG-TO220]()
BUZ31 N-Channel 200V 14.5A 95W Through Hole MOSFET PG-TO220
Rs. 500.00Specification:-
- Package: TO-220-3
- Drain to Source Voltage: 200 V
- Current: Continuous Drain (Id): 14.5A (Tc)
- Drive Voltage: 5V
- Power Dissipation (Max): 95W
- Operating Temperature: -55°C ~ 150°C
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![IRFD9113 P-Channel 60V 600mA Through Hole 4-HVMDIP MOSFET]()
IRFD9113 P-Channel 60V 600mA Through Hole 4-HVMDIP MOSFET
Rs. 500.00Specification:-
- Package: DIP4 (0.300", 7.62mm)
- Supplier Device Package: 4-HVMDIP
- Channel Type: P-Channel
- Drain to Source Voltage: 60 V
- Current - Continuous Drain: 600mA
