MOSFET
Showing 1–12 of 105 results
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P55NF06 60V 50A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 60V
- Continuous Drain Current (Id): 50A
- Drain-Source Resistance (Rds On): 0.018 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 60 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 110W
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P90NF03L 30V 90A N-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): -30V
- Continuous Drain Current (Id): -90A
- Drain-Source Resistance (Rds On): 0.0065 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 47 nC
- Operating Temperature Range: -65 – 175°C
- Power Dissipation (Pd): 150W
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IRFP460 500V 20A N-Channel Power MOSFET (TO-247 Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 20A
- Drain-Source Resistance (Rds On): 0.024 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 124 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 280W
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P75NF758 75V 80A N-Channel Power Mosfet Pack of 5
Rs. 349.00Specification:-
- Model: P75NF758
- Type: N-Channel Power MOSFET
- Drain-to-source voltage: VDSS = 75 V
- Gate-to-source voltage: VGSS = ± 20 V
- Drain current: ID = 80 A
- Channel temperature: Tch = 150 °C
- Storage temperature: Tstg = -55 to +175 °C
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23N50E N-Channel Silicon Power MOSFET
Rs. 149.00Specification:-
- Type: MOSFET
- Voltage: 500V
- Drain Current: 23A
- Reverse Recovery change: 8Micro C
- Gate source voltage: 30V
- Total power dissipation: 315W
- Operating and Storage Temperature Range: -55°C TO 150°C
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SI2308 N-Channel SMD MOSFET (SOT-23 Package)
Rs. 29.00Specification:-
- Drain-Source Voltage: 60 V
- Gate-Source Voltage: ± 20 V
- Drain Current Continuous: 2.3 A
- Drain Current Pulsed (tp≤10µS): 8 A
- Drain Power Dissipation: 1.66 W
- Storage Temperature Range: -55 to +15°C
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FQPF7N80C 800V N-Channel MOSFET (TO-220 Package) Pack of 5
Rs. 229.00Specification:-
- Package Type: TO-126
- Type: N-Channel MOSFET
- VDSS Drain-Source Voltage 800
- VGS Gate-Source Voltage ±30
- ID Drain Current-Continuous 6.6
- IDM Drain Current-Single Pulsed 26.4
- Operating Temperature Range: -55°C to +150°C
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IRF3710 100V 57A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 57A
- Drain-Source Resistance (Rds On): 23mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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IRFP4468 100V 290A N-Channel MOSFET (TO-247 Package)
Rs. 699.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 290A
- Drain-Source Resistance (Rds On): 2.6Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 89 nC
- Operating Temperature Range: -55 to 175°C
- Power Dissipation (Pd): 520W
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AO3401-30V 4A P-Channel MOSFET SOT-23 Pack of 3000
Rs. 8999.00Specification:-
- Gate to Source Voltage: ±12V
- Power Dissipation: 1.4W
- Number of Pins: 3
- Drain to Source Voltage: -30V
- Continuous Drain Current: 4.2
- Input Capacitance: 645pF
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IRFI644 250V 7.9A N-Channel Power MOSFET (TO-220 package)
Rs. 99.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 7.9A
- Drain-Source Resistance (Rds On): 0.28mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 68 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 40W
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IRFP260N 200V 50A N-Channel Power MOSFET (TO-247 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 50A
- Drain-Source Resistance (Rds On): 0.04 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 234 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 300W