MOSFET

Showing 1–12 of 105 results

  • IRFI644 250V 7.9A N-Channel Power MOSFET (TO-220 package)
    Rs. 99.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 250V
    • Continuous Drain Current (Id): 7.9A
    • Drain-Source Resistance (Rds On): 0.28mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 68 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 40W

  • P30NF10/STP30NF10 100V 35A N-Channel Power MOSFET (TO-220 Package)
    Rs. 39.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 100V
    • Continuous Drain Current (Id): 35A
    • Drain-Source Resistance (Rds On): 0.045 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 55 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 115W

  • AO3401-30V 4A P-Channel MOSFET SOT-23 Pack of 3000
    Rs. 8999.00

    Specification:-

    • Gate to Source Voltage: ±12V
    • Power Dissipation: 1.4W 
    • Number of Pins: 3
    • Drain to Source Voltage: -30V
    • Continuous Drain Current: 4.2 
    • Input Capacitance: 645pF
  • IRFP150N 100V 42A N-Channel Power MOSFET (TO-247 Package)
    Rs. 59.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 100V
    • Continuous Drain Current (Id): 42A
    • Drain-Source Resistance (Rds On): 0.036 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 110 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 160W

  • FQA69N30 300V N-Channel Power MOSFET
    Rs. 329.00

    Specification:-

    • Type: MOSFET
    • Package: TO-3PN
    • No of leads: 3
    • Gate source voltage: 30V
    • Power dissipation: 310W
    • Drain source voltage: 300V

  • 20N60 650V 20.7A N-Channel Power MOSFET (TO-247 Package)
    Rs. 139.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 650V
    • Continuous Drain Current (Id): 20.7A
    • Drain-Source Resistance (Rds On): 190Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 58 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 208W
  • IRFP264N 250V 44A N-Channel Power MOSFET (TO-247 Package)
    Rs. 148.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): 250V
    • Continuous Drain Current (Id): 44A
    • Drain-Source Resistance (Rds On): 0.06 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 210 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 380W
  • IRF9640 200V 11A P-Channel Power MOSFET (TO-220 Package)
    Rs. 89.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): -200V
    • Continuous Drain Current (Id): -11A
    • Drain-Source Resistance (Rds On): 0.5Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 44 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 125W
  • IRF440 500V 8.8A N-Channel Power MOSFET (TO-247 Package)
    Rs. 119.00

    Specification:-

    • Drain-Source Breakdown Voltage min : 500V
    • Temperature Coefficient type : 0.78V/°C
    • Gate-Source Threshold Voltage min : 2.0V
    • Gate-Source Threshold Voltage max : 4.0V
    • Gate-Source Leakage max : +100nA
    • Drain-Source On-State Resistance : 0.85Ω
    • Forward Transconductance min : 5.3S

  • IRF9540N 100V 23A P-Channel Power MOSFET (TO-220 Package)
    Rs. 39.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): -100V
    • Continuous Drain Current (Id): -23A
    • Drain-Source Resistance (Rds On): 0.117 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 97 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 140W
  • IRF740 400V 10A N-Channel Power MOSFET (TO-220 Package)
    Rs. 49.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 400V
    • Continuous Drain Current (Id): 10A
    • Drain-Source Resistance (Rds On): 0.54 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 53 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 134W
  • IRFB7545 60V 95A N-Channel Power MOSFET (TO-220 Package)
    Rs. 89.00

    Specification:-

    • Channel Type: N Channel
    • Drain Source Voltage: 60V
    • Continuous Drain Current: 95A
    • Rds(on) Test Voltage: 10V
    • Gate Source Threshold Voltage: 3.7V
    • Power Dissipation: 125W
    • Operating Temperature: 175°C
    • Drain Source On State Resistance: 0.0049 ohm
    • Minimum Operating Temperature: -55°C
    • Maximum Operating Temperature: + 175°C