MOSFET
Showing 1–12 of 105 results
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![BSP298E N-Channel 400V 500mA 1.8W Surface Mount MOSFET PG-TO223]()
BSP298E N-Channel 400V 500mA 1.8W Surface Mount MOSFET PG-TO223
Rs. 500.00Specification:-
- Package: SOT-223-4 (3 Leads + Tab) / TO-261-4 / TO-261AA
- Type: N-Channel Power MOSFET
- Drain to Source Voltage: 400 V
- Drive Voltage: 10V
- Power Dissipation (Max): 1.8W
- Operating Temperature: -55°C ~ 150°C
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![BUZ31 N-Channel 200V 14.5A 95W Through Hole MOSFET PG-TO220]()
BUZ31 N-Channel 200V 14.5A 95W Through Hole MOSFET PG-TO220
Rs. 500.00Specification:-
- Package: TO-220-3
- Drain to Source Voltage: 200 V
- Current: Continuous Drain (Id): 14.5A (Tc)
- Drive Voltage: 5V
- Power Dissipation (Max): 95W
- Operating Temperature: -55°C ~ 150°C
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![2SK2611 900V 9A N-Channel Power MOSFET (TO-3PN Package)]()
2SK2611 900V 9A N-Channel Power MOSFET (TO-3PN Package)
Rs. 119.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 1.1Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
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![IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 169A
- Drain-Source Resistance (Rds On): 5.3mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 260 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W
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![IRFBC30 600V 3.6A N-Channel Power MOSFET (TO-220 Package)]()
IRFBC30 600V 3.6A N-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 3.6A
- Drain-Source Resistance (Rds On): 2.2Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 31 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 74W
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![2SK2698 500V 15A N-Channel Power MOSFET (TO-3PN Package)]()
2SK2698 500V 15A N-Channel Power MOSFET (TO-3PN Package)
Rs. 149.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 15A
- Drain-Source Resistance (Rds On): 0.35 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 150W
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![IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 180A
- Drain-Source Resistance (Rds On): 4.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 370W
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![IRF620 200V 5.2A N-Channel Power MOSFET (TO-220 Package)]()
IRF620 200V 5.2A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 5.2A
- Drain-Source Resistance (Rds On): 0.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 14 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
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![GM8205A Mosfet Dual N-Channel Transistor 20V SOT-23-6]()
GM8205A Mosfet Dual N-Channel Transistor 20V SOT-23-6
Rs. 500.00Specification:-
- Package: SOT-23-6
- Drain-Source Voltage: 20V
- Gate- Source Voltage: +8V
- Drain Current: 5.0A
- Drain Current: 20A
- Thermal Resistance Junction-Ambient : 78℃/W
- Thermal Resistance Junction-Case: 40℃/W
- Junction/Storage Temperature: -55~150℃
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![2SK3550 900V 10A N-Channel Power MOSFET (TO-3PF Package)]()
2SK3550 900V 10A N-Channel Power MOSFET (TO-3PF Package)
Rs. 489.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Collector Current (Ic): 10A
- Drain-Source Resistance (Rds On): 1.4Ohms
- Gate-Source Voltage (Vgs): 30V
- Configuration: Single
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 130W
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![IRFP044N 55V 53A N-Channel HEXFET Power MOSFET (TO-247 Package)]()
IRFP044N 55V 53A N-Channel HEXFET Power MOSFET (TO-247 Package)
Rs. 199.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 53A
- Drain-Source Resistance (Rds On): 0.020 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 61 nC
- Operating Temperature Range: -55 to 175°C
- Power Dissipation (Pd): 120W
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![IRF9Z34 60V 18A P-Channel Power MOSFET (TO-220 Package)]()
IRF9Z34 60V 18A P-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -60V
- Continuous Drain Current (Id): -18A
- Drain-Source Resistance (Rds On): 0.14 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 34 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 88W