MOSFET
Showing 1–12 of 105 results
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2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)
Rs. 69.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 6A
- Drain-Source Resistance (Rds On): 1.25 Ohms
- Gate-Source Voltage (Vgs): 3.5V
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 45W
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2SK2225 1500V 2A N-Channel Power MOSFET (TO-3PFM Package)
Rs. 389.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1500V
- Continuous Drain Current (Id): 2A
- Drain-Source Resistance (Rds On): 12Ohms
- Gate-Source Voltage (Vgs): 20V
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 50W
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FQA69N30 300V N-Channel Power MOSFET
Rs. 329.00Specification:-
- Type: MOSFET
- Package: TO-3PN
- No of leads: 3
- Gate source voltage: 30V
- Power dissipation: 310W
- Drain source voltage: 300V
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IRF840 500V 8A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 8A
- Drain-Source Resistance (Rds On): 850mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 39 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 125W
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IRFP4568 150V 171A N-Channel Power MOSFET (TO-247 Package)
Rs. 469.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 150V
- Continuous Drain Current (Id): 171A
- Drain-Source Resistance (Rds On): 5.9mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 227 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 517W
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IRFP450 500V 14A N-Channel Power MOSFET (TO-247 Package)
Rs. 119.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 14A
- Drain-Source Resistance (Rds On): 370mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 77 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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IRFP140N 100V 33A N-Channel Power MOSFET (TO-247 Package)
Rs. 179.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 33A
- Drain-Source Resistance (Rds On): 0.052 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 94 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 140W
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IRF2807 75V 82A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 82A
- Drain-Source Resistance (Rds On): 13mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 160 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 230W
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IRF640 200V 18A N-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 18A
- Drain-Source Resistance (Rds On): 0.15 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
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IRF1010 60V 84A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 60V
- Continuous Drain Current (Id): 84A
- Drain-Source Resistance (Rds On): 12mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 200W
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IRFB4321 150V 85A N-Channel Power MOSFET (TO-220 Package)
Rs. 229.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 150V
- Continuous Drain Current (Id): 85A
- Drain-Source Resistance (Rds On): 15mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 110 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 350W
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2SK3878 900V 9A N-Channel Power MOSFET (TO-3P Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 1Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 60 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W