MOSFET

Showing 1–12 of 96 results

  • P55NF06 60V 50A N-Channel Power MOSFET (TO-220 Package)
    Rs. 39.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 60V
    • Continuous Drain Current (Id): 50A
    • Drain-Source Resistance (Rds On): 0.018 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 60 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 110W

  • IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)
    Rs. 49.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 600V
    • Continuous Drain Current (Id): 6.2A
    • Drain-Source Resistance (Rds On): 1.2Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 60 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 125W

  • IRFB4321 150V 85A N-Channel Power MOSFET (TO-220 Package)
    Rs. 229.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 150V
    • Continuous Drain Current (Id): 85A
    • Drain-Source Resistance (Rds On): 15mOhms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 110 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 350W
  • 2SK2225 1500V 2A N-Channel Power MOSFET (TO-3PFM Package)
    Rs. 389.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 1500V
    • Continuous Drain Current (Id): 2A
    • Drain-Source Resistance (Rds On): 12Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 50W
  • FQA69N30 300V N-Channel Power MOSFET
    Rs. 329.00

    Specification:-

    • Type: MOSFET
    • Package: TO-3PN
    • No of leads: 3
    • Gate source voltage: 30V
    • Power dissipation: 310W
    • Drain source voltage: 300V

  • IRFBG30 400V 5.5A N-Channel Power MOSFET (TO-220 Package)
    Rs. 29.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 400V
    • Continuous Drain Current (Id): 5.5A
    • Drain-Source Resistance (Rds On): 1Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 38 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 74W
  • IRF630 200V 9A N-Channel Power MOSFET (TO-220 Package)
    Rs. 39.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 200V
    • Continuous Drain Current (Id): 9A
    • Drain-Source Resistance (Rds On): 0.4Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 43 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 74W
  • IRFB7545 60V 95A N-Channel Power MOSFET (TO-220 Package)
    Rs. 89.00

    Specification:-

    • Channel Type: N Channel
    • Drain Source Voltage: 60V
    • Continuous Drain Current: 95A
    • Rds(on) Test Voltage: 10V
    • Gate Source Threshold Voltage: 3.7V
    • Power Dissipation: 125W
    • Operating Temperature: 175°C
    • Drain Source On State Resistance: 0.0049 ohm
    • Minimum Operating Temperature: -55°C
    • Maximum Operating Temperature: + 175°C
  • IRFP254N 250V 23A N-Channel Power MOSFET (TO-247 Package)
    Rs. 229.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 250V
    • Continuous Drain Current (Id): 23A
    • Drain-Source Resistance (Rds On): 125mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 100 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 220W
  • IRFI644 250V 7.9A N-Channel Power MOSFET (TO-220 package)
    Rs. 99.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 250V
    • Continuous Drain Current (Id): 7.9A
    • Drain-Source Resistance (Rds On): 0.28mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 68 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 40W

  • IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)
    Rs. 139.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 1000V
    • Continuous Drain Current (Id): 3.1A
    • Drain-Source Resistance (Rds On): 5Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 80 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 125W
  • IRF9640 200V 11A P-Channel Power MOSFET (TO-220 Package)
    Rs. 89.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): -200V
    • Continuous Drain Current (Id): -11A
    • Drain-Source Resistance (Rds On): 0.5Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 44 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 125W