MOSFET
Showing 1–12 of 96 results
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![FQPF7N80C 800V N-Channel MOSFET (TO-220 Package) Pack of 5]()
FQPF7N80C 800V N-Channel MOSFET (TO-220 Package) Pack of 5
Rs. 229.00Specification:-
- Package Type: TO-126
- Type: N-Channel MOSFET
- VDSS Drain-Source Voltage 800
- VGS Gate-Source Voltage ±30
- ID Drain Current-Continuous 6.6
- IDM Drain Current-Single Pulsed 26.4
- Operating Temperature Range: -55°C to +150°C
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![SI2308 N-Channel SMD MOSFET (SOT-23 Package)]()
SI2308 N-Channel SMD MOSFET (SOT-23 Package)
Rs. 29.00Specification:-
- Drain-Source Voltage: 60 V
- Gate-Source Voltage: ± 20 V
- Drain Current Continuous: 2.3 A
- Drain Current Pulsed (tp≤10µS): 8 A
- Drain Power Dissipation: 1.66 W
- Storage Temperature Range: -55 to +15°C
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![2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)]()
2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)
Rs. 69.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 6A
- Drain-Source Resistance (Rds On): 1.25 Ohms
- Gate-Source Voltage (Vgs): 3.5V
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 45W
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![IRFP4468 100V 290A N-Channel MOSFET (TO-247 Package)]()
IRFP4468 100V 290A N-Channel MOSFET (TO-247 Package)
Rs. 699.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 290A
- Drain-Source Resistance (Rds On): 2.6Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 89 nC
- Operating Temperature Range: -55 to 175°C
- Power Dissipation (Pd): 520W
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![IRF840 500V 8A N-Channel Power MOSFET (TO-220 Package)]()
IRF840 500V 8A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 8A
- Drain-Source Resistance (Rds On): 850mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 39 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 125W
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![IRFP450 500V 14A N-Channel Power MOSFET (TO-247 Package)]()
IRFP450 500V 14A N-Channel Power MOSFET (TO-247 Package)
Rs. 119.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 14A
- Drain-Source Resistance (Rds On): 370mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 77 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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![IRF440 500V 8.8A N-Channel Power MOSFET (TO-247 Package)]()
IRF440 500V 8.8A N-Channel Power MOSFET (TO-247 Package)
Rs. 119.00Specification:-
- Drain-Source Breakdown Voltage min : 500V
- Temperature Coefficient type : 0.78V/°C
- Gate-Source Threshold Voltage min : 2.0V
- Gate-Source Threshold Voltage max : 4.0V
- Gate-Source Leakage max : +100nA
- Drain-Source On-State Resistance : 0.85Ω
- Forward Transconductance min : 5.3S
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![IRF9540N 100V 23A P-Channel Power MOSFET (TO-220 Package)]()
IRF9540N 100V 23A P-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -100V
- Continuous Drain Current (Id): -23A
- Drain-Source Resistance (Rds On): 0.117 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 97 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 140W
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![IRFP150N 100V 42A N-Channel Power MOSFET (TO-247 Package)]()
IRFP150N 100V 42A N-Channel Power MOSFET (TO-247 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 42A
- Drain-Source Resistance (Rds On): 0.036 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 110 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 160W
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![IRF2807 75V 82A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF2807 75V 82A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 82A
- Drain-Source Resistance (Rds On): 13mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 160 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 230W
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![IRFZ48N 55V 64A N-Channel Power MOSFET (TO-220 Package)]()
IRFZ48N 55V 64A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 64A
- Drain-Source Resistance (Rds On): 0.014 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 81 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 130W
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![20N60 650V 20.7A N-Channel Power MOSFET (TO-247 Package)]()
20N60 650V 20.7A N-Channel Power MOSFET (TO-247 Package)
Rs. 139.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 650V
- Continuous Drain Current (Id): 20.7A
- Drain-Source Resistance (Rds On): 190Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 208W