MOSFET

Showing 1–12 of 105 results

  • SI2308 N-Channel SMD MOSFET (SOT-23 Package)
    Rs. 29.00

    Specification:-

    • Drain-Source Voltage: 60 V
    • Gate-Source Voltage: ± 20 V
    • Drain Current Continuous: 2.3 A
    • Drain Current Pulsed (tp≤10µS): 8 A
    • Drain Power Dissipation: 1.66 W
    • Storage Temperature Range: -55 to +15°C
  • FQPF7N80C 800V N-Channel MOSFET (TO-220 Package) Pack of 5
    Rs. 229.00

    Specification:-

    • Package Type: TO-126
    • Type: N-Channel MOSFET
    • VDSS Drain-Source Voltage 800
    • VGS Gate-Source Voltage ±30
    •  ID Drain Current-Continuous 6.6
    • IDM Drain Current-Single Pulsed 26.4
    • Operating Temperature Range: -55°C to +150°C
  • AO3401-30V 4A P-Channel MOSFET SOT-23 Pack of 3000
    Rs. 8999.00

    Specification:-

    • Gate to Source Voltage: ±12V
    • Power Dissipation: 1.4W 
    • Number of Pins: 3
    • Drain to Source Voltage: -30V
    • Continuous Drain Current: 4.2 
    • Input Capacitance: 645pF
  • IRFI644 250V 7.9A N-Channel Power MOSFET (TO-220 package)
    Rs. 99.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 250V
    • Continuous Drain Current (Id): 7.9A
    • Drain-Source Resistance (Rds On): 0.28mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 68 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 40W

  • IRF9520 -100V 6.8A P-Channel Power MOSFET (TO-220 Package)
    Rs. 49.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): -100V
    • Continuous Drain Current (Id): -6.8A
    • Drain-Source Resistance (Rds On): 0.48 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 18 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 48W
  • IRF3710 100V 57A N-Channel HEXFET Power MOSFET (TO-220 Package)
    Rs. 49.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 100V
    • Continuous Drain Current (Id): 57A
    • Drain-Source Resistance (Rds On): 23mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 130 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 200W
  • IRF440 500V 8.8A N-Channel Power MOSFET (TO-247 Package)
    Rs. 119.00

    Specification:-

    • Drain-Source Breakdown Voltage min : 500V
    • Temperature Coefficient type : 0.78V/°C
    • Gate-Source Threshold Voltage min : 2.0V
    • Gate-Source Threshold Voltage max : 4.0V
    • Gate-Source Leakage max : +100nA
    • Drain-Source On-State Resistance : 0.85Ω
    • Forward Transconductance min : 5.3S

  • P55NF06 60V 50A N-Channel Power MOSFET (TO-220 Package)
    Rs. 39.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 60V
    • Continuous Drain Current (Id): 50A
    • Drain-Source Resistance (Rds On): 0.018 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 60 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 110W

  • IRFZ48N 55V 64A N-Channel Power MOSFET (TO-220 Package)
    Rs. 39.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 55V
    • Continuous Drain Current (Id): 64A
    • Drain-Source Resistance (Rds On): 0.014 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 81 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 130W

  • 23N50E N-Channel Silicon Power MOSFET
    Rs. 149.00

    Specification:-

    • Type: MOSFET
    • Voltage: 500V
    • Drain Current: 23A
    • Reverse Recovery change: 8Micro C
    • Gate source voltage: 30V
    • Total power dissipation: 315W
    • Operating and Storage Temperature Range: -55°C TO 150°C
  • IRF740 400V 10A N-Channel Power MOSFET (TO-220 Package)
    Rs. 49.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 400V
    • Continuous Drain Current (Id): 10A
    • Drain-Source Resistance (Rds On): 0.54 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 53 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 134W
  • IRFP4468 100V 290A N-Channel MOSFET (TO-247 Package)
    Rs. 699.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 100V
    • Continuous Drain Current (Id): 290A
    • Drain-Source Resistance (Rds On): 2.6Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 89 nC
    • Operating Temperature Range: -55 to 175°C
    • Power Dissipation (Pd): 520W