MOSFET
Showing 1–12 of 105 results
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![IRF440 500V 8.8A N-Channel Power MOSFET (TO-247 Package)]()
IRF440 500V 8.8A N-Channel Power MOSFET (TO-247 Package)
Rs. 119.00Specification:-
- Drain-Source Breakdown Voltage min : 500V
- Temperature Coefficient type : 0.78V/°C
- Gate-Source Threshold Voltage min : 2.0V
- Gate-Source Threshold Voltage max : 4.0V
- Gate-Source Leakage max : +100nA
- Drain-Source On-State Resistance : 0.85Ω
- Forward Transconductance min : 5.3S
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![BSS138 50V N-Channel Enhancement Mode MOSFET]()
BSS138 50V N-Channel Enhancement Mode MOSFET
Rs. 29.00Specification:-
- Drain-Source Voltage: 50 V
- Gate-Source Voltage: ± 20 V
- Drain Current Continuous: 200 mA
- Drain Current Pulsed (tp≤10µS): 800 mA
- Drain Power Dissipation: 225 mW
- Thermal Resistance, Junction to Ambient: 556°C/W
- Storage Temperature Range: -55 to +150 °C
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![IRF530 100V 17A N-Channel Power MOSFET (TO-220 Package)]()
IRF530 100V 17A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 17A
- Drain-Source Resistance (Rds On): 90mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 37 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 70W
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![IRFP240 200V 20A N-Channel Power MOSFET (TO-247 Package)]()
IRFP240 200V 20A N-Channel Power MOSFET (TO-247 Package)
Rs. 139.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): 20A
- Drain-Source Resistance (Rds On): 0.18 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
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![IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 180A
- Drain-Source Resistance (Rds On): 4.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 370W
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![IRF9Z24 60V 11A P-Channel Power MOSFET (TO-220 Package)]()
IRF9Z24 60V 11A P-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -60V
- Continuous Drain Current (Id): -11A
- Drain-Source Resistance (Rds On): 0.28 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 19 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 60W
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![IRF640 200V 18A N-Channel Power MOSFET (TO-220 Package)]()
IRF640 200V 18A N-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 18A
- Drain-Source Resistance (Rds On): 0.15 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
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![2SK1317 1500V 2.5A N-Channel Power MOSFET (TO-3P Package)]()
2SK1317 1500V 2.5A N-Channel Power MOSFET (TO-3P Package)
Rs. 519.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1500V
- Collector Current (Ic): 2.5A
- Drain-Source Resistance (Rds On): 12Ohms
- Gate-Source Voltage (Vgs): 20V
- Configuration: Single
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 100W
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![IRFP9240 200V 12A P-Channel Power MOSFET TO-247 Package]()
IRFP9240 200V 12A P-Channel Power MOSFET TO-247 Package
Rs. 199.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -12A
- Drain-Source Resistance (Rds On): 500mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 44 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
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![IRF1010 60V 84A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1010 60V 84A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 60V
- Continuous Drain Current (Id): 84A
- Drain-Source Resistance (Rds On): 12mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 200W
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![IRF9630 200V 6.5A P-Channel Power MOSFET (TO-220 Package)]()
IRF9630 200V 6.5A P-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -6.5A
- Drain-Source Resistance (Rds On): 0.80 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 29 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 74W
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![IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 169A
- Drain-Source Resistance (Rds On): 5.3mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 260 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W
