MOSFET
Showing 1–12 of 105 results
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![FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)]()
FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)
Rs. 499.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 48A
- Drain-Source Resistance (Rds On): 105mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 137 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 625W
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![IRFP240 200V 20A N-Channel Power MOSFET (TO-247 Package)]()
IRFP240 200V 20A N-Channel Power MOSFET (TO-247 Package)
Rs. 139.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): 20A
- Drain-Source Resistance (Rds On): 0.18 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
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![IRF610 200V 3.3A N-Channel Power MOSFET (TO-220 Package)]()
IRF610 200V 3.3A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 3.3A
- Drain-Source Resistance (Rds On): 1.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 8.2 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 36W
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![2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)]()
2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)
Rs. 69.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 6A
- Drain-Source Resistance (Rds On): 1.25 Ohms
- Gate-Source Voltage (Vgs): 3.5V
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 45W
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![IRF720 400V 3.3A N-Channel Power MOSFET (TO-220 Package)]()
IRF720 400V 3.3A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 3.3A
- Drain-Source Resistance (Rds On): 1.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 20 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
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![IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 130A
- Drain-Source Resistance (Rds On): 7.8mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 250 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W
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![IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 169A
- Drain-Source Resistance (Rds On): 5.3mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 260 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W
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![IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)]()
IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 6.2A
- Drain-Source Resistance (Rds On): 1.2Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 60 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 125W
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![IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)]()
IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 2.5A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 17 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
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![IRF9Z24 60V 11A P-Channel Power MOSFET (TO-220 Package)]()
IRF9Z24 60V 11A P-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -60V
- Continuous Drain Current (Id): -11A
- Drain-Source Resistance (Rds On): 0.28 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 19 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 60W
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![IRFP254N 250V 23A N-Channel Power MOSFET (TO-247 Package)]()
IRFP254N 250V 23A N-Channel Power MOSFET (TO-247 Package)
Rs. 229.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 23A
- Drain-Source Resistance (Rds On): 125mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 100 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 220W
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![2SK962 900V 8A N-Channel Silicon Power MOSFET (TO-3P Package)]()
2SK962 900V 8A N-Channel Silicon Power MOSFET (TO-3P Package)
Rs. 109.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 8A
- Drain-Source Resistance (Rds On): 20Ohms
- Gate-Source Voltage (Vgs): 20V
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W