MOSFET

Showing 1–12 of 105 results

  • IRFP2907 75V 209A N-Channel Power MOSFET (TO-247 Package)
    Rs. 499.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 75V
    • Continuous Drain Current (Id): 209A
    • Drain-Source Resistance (Rds On): 4.5mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 620 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 470W
  • IRF3415 150V 43A N-Channel HEXFET Power MOSFET (TO-220 Package)
    Rs. 99.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 150V
    • Continuous Drain Current (Id): 43A
    • Drain-Source Resistance (Rds On): 42mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 200 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 200W
  • IRFP22N60K 600V 22A N-Channel Power MOSFET (TO-247 Package)
    Rs. 289.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 600V
    • Continuous Drain Current (Id): 22A
    • Drain-Source Resistance (Rds On): 0.28 Ohms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 150 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 370W
  • BSP298E N-Channel 400V 500mA 1.8W Surface Mount MOSFET PG-TO223
    Rs. 500.00

    Specification:-

    • Package: SOT-223-4 (3 Leads + Tab) / TO-261-4 / TO-261AA
    • Type: N-Channel Power MOSFET
    • Drain to Source Voltage: 400 V
    • Drive Voltage: 10V
    • Power Dissipation (Max): 1.8W 
    • Operating Temperature: -55°C ~ 150°C
  • IRF620 200V 5.2A N-Channel Power MOSFET (TO-220 Package)
    Rs. 29.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 200V
    • Continuous Drain Current (Id): 5.2A
    • Drain-Source Resistance (Rds On): 0.8Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 14 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 50W
  • 2SK2611 900V 9A N-Channel Power MOSFET (TO-3PN Package)
    Rs. 119.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 900V
    • Continuous Drain Current (Id): 9A
    • Drain-Source Resistance (Rds On): 1.1Ohms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 58 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 150W

  • P80NF55 55V 80A N-Channel Power MOSFET (TO-220 Package)
    Rs. 69.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 55V
    • Continuous Drain Current (Id): 80A
    • Drain-Source Resistance (Rds On): 8Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 155 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 300W
  • BUZ31 N-Channel 200V 14.5A 95W Through Hole MOSFET PG-TO220
    Rs. 500.00

    Specification:-

    • Package: TO-220-3
    • Drain to Source Voltage: 200 V
    • Current: Continuous Drain (Id): 14.5A (Tc)
    • Drive Voltage: 5V
    • Power Dissipation (Max): 95W 
    • Operating Temperature: -55°C ~ 150°C
  • 2SK2698 500V 15A N-Channel Power MOSFET (TO-3PN Package)
    Rs. 149.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 500V
    • Continuous Drain Current (Id): 15A
    • Drain-Source Resistance (Rds On): 0.35 Ohms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 58 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 150W
  • 2SK3550 900V 10A N-Channel Power MOSFET (TO-3PF Package)
    Rs. 489.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 900V
    • Collector Current (Ic): 10A
    • Drain-Source Resistance (Rds On): 1.4Ohms
    • Gate-Source Voltage (Vgs): 30V
    • Configuration: Single
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 130W
  • IRF9Z34 60V 18A P-Channel Power MOSFET (TO-220 Package)
    Rs. 59.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): -60V
    • Continuous Drain Current (Id): -18A
    • Drain-Source Resistance (Rds On): 0.14 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 34 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 88W
  • IRFP350 400V 16A N-Channel Power MOSFET (TO-247 Package)
    Rs. 199.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 400V
    • Continuous Drain Current (Id): 16A
    • Drain-Source Resistance (Rds On): 300mOhms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 150 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 190W