MOSFET

Showing 1–12 of 105 results

  • IRFP240 200V 20A N-Channel Power MOSFET (TO-247 Package)
    MOSFET
    IRFP240 200V 20A N-Channel Power MOSFET (TO-247 Package)
    Rs. 139.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): -200V
    • Continuous Drain Current (Id): 20A
    • Drain-Source Resistance (Rds On): 0.18 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 70 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 150W
    (1)
    Rs. 139.00
  • IRF720 400V 3.3A N-Channel Power MOSFET (TO-220 Package)
    MOSFET
    IRF720 400V 3.3A N-Channel Power MOSFET (TO-220 Package)
    Rs. 29.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 400V
    • Continuous Drain Current (Id): 3.3A
    • Drain-Source Resistance (Rds On): 1.8Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 20 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 50W
    (1)
    Rs. 29.00
  • TC4953A P-Channel 20 V 3A Surface Mount Transistor 8-SOIC
    MOSFET
    TC4953A P-Channel 20 V 3A Surface Mount Transistor 8-SOIC
    Rs. 500.00

    Specification:-

    • Package: SOIC8 (0.154", 3.90mm)
    • Type: P-Channel
    • Mounting Type: SMD/SMT
    • Drain-source voltage: -20V
    • Yang source voltage: ±12
    • Drain current: -3
    • Drain pulse current: -1
    • Operating junction temperature and storage temperature range: -50°C to150°C
    (1)
    Rs. 500.00
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  • IRF610 200V 3.3A N-Channel Power MOSFET (TO-220 Package)
    MOSFET
    IRF610 200V 3.3A N-Channel Power MOSFET (TO-220 Package)
    Rs. 39.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 200V
    • Continuous Drain Current (Id): 3.3A
    • Drain-Source Resistance (Rds On): 1.5Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 8.2 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 36W
    (1)
    Rs. 39.00
  • FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)
    MOSFET
    FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)
    Rs. 499.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 500V
    • Continuous Drain Current (Id): 48A
    • Drain-Source Resistance (Rds On): 105mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 137 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 625W
    (1)
    Rs. 499.00
  • IRF9610 200V 1.8A P-Channel HEXFET Power MOSFET (TO-220 Package)
    MOSFET
    IRF9610 200V 1.8A P-Channel HEXFET Power MOSFET (TO-220 Package)
    Rs. 59.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): -200V
    • Continuous Drain Current (Id): -18A
    • Drain-Source Resistance (Rds On): 3Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 11 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 20W

    (1)
    Rs. 59.00
  • IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)
    MOSFET
    IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)
    Rs. 89.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 55V
    • Continuous Drain Current (Id): 169A
    • Drain-Source Resistance (Rds On): 5.3mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 260 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 330W

    (1)
    Rs. 89.00
  • 2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)
    MOSFET
    2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)
    Rs. 69.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 600V
    • Continuous Drain Current (Id): 6A
    • Drain-Source Resistance (Rds On): 1.25 Ohms
    • Gate-Source Voltage (Vgs): 3.5V
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 45W
    (1)
    Rs. 69.00
  • IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)
    MOSFET
    IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)
    Rs. 49.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 600V
    • Continuous Drain Current (Id): 6.2A
    • Drain-Source Resistance (Rds On): 1.2Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 60 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 125W

    (1)
    Rs. 49.00
  • IRF9Z24 60V 11A P-Channel Power MOSFET (TO-220 Package)
    MOSFET
    IRF9Z24 60V 11A P-Channel Power MOSFET (TO-220 Package)
    Rs. 59.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): -60V
    • Continuous Drain Current (Id): -11A
    • Drain-Source Resistance (Rds On): 0.28 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 19 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 60W
    (1)
    Rs. 59.00
  • BSS138 50V N-Channel Enhancement Mode MOSFET
    MOSFET
    BSS138 50V N-Channel Enhancement Mode MOSFET
    Rs. 29.00

    Specification:-

    • Drain-Source Voltage: 50 V
    • Gate-Source Voltage: ± 20 V
    • Drain Current Continuous: 200 mA
    • Drain Current Pulsed (tp≤10µS): 800 mA
    • Drain Power Dissipation: 225 mW
    • Thermal Resistance, Junction to Ambient: 556°C/W
    • Storage Temperature Range: -55 to +150 °C
    (1)
    Rs. 29.00
  • IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)
    MOSFET
    IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)
    Rs. 39.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 500V
    • Continuous Drain Current (Id): 2.5A
    • Drain-Source Resistance (Rds On): 3Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 17 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 50W
    (1)
    Rs. 39.00

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