MOSFET
Showing 1–12 of 105 results
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![2SK1120 1000V 8A N-Channel Power MOSFET (TO-3PN Package)]()
2SK1120 1000V 8A N-Channel Power MOSFET (TO-3PN Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Collector Current (Ic): 8A
- Drain-Source Resistance (Rds On): 1.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 120 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
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![2SK962 900V 8A N-Channel Silicon Power MOSFET (TO-3P Package)]()
2SK962 900V 8A N-Channel Silicon Power MOSFET (TO-3P Package)
Rs. 109.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 8A
- Drain-Source Resistance (Rds On): 20Ohms
- Gate-Source Voltage (Vgs): 20V
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
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![IRFP254N 250V 23A N-Channel Power MOSFET (TO-247 Package)]()
IRFP254N 250V 23A N-Channel Power MOSFET (TO-247 Package)
Rs. 229.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 23A
- Drain-Source Resistance (Rds On): 125mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 100 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 220W
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![IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 180A
- Drain-Source Resistance (Rds On): 4.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 370W
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![IRF530 100V 17A N-Channel Power MOSFET (TO-220 Package)]()
IRF530 100V 17A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 17A
- Drain-Source Resistance (Rds On): 90mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 37 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 70W
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![IRFBG30 400V 5.5A N-Channel Power MOSFET (TO-220 Package)]()
IRFBG30 400V 5.5A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 5.5A
- Drain-Source Resistance (Rds On): 1Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 38 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 74W
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![IRF9530 100V 14A P-Channel Power MOSFET (TO-220 Package)]()
IRF9530 100V 14A P-Channel Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -100V
- Continuous Drain Current (Id): 014A
- Drain-Source Resistance (Rds On): 0.20 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 79W
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![IRF5305 55V 31A P-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF5305 55V 31A P-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 79.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -55V
- Continuous Drain Current (Id): -31A
- Drain-Source Resistance (Rds On): 60mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 63 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 110W
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![IRFBE30 800V 4.1A N-Channel Power MOSFET (TO-220 Package)]()
IRFBE30 800V 4.1A N-Channel Power MOSFET (TO-220 Package)
Rs. 119.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 800V
- Continuous Drain Current (Id): 4.1A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 78 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 125W
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![IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)]()
IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)
Rs. 139.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Continuous Drain Current (Id): 3.1A
- Drain-Source Resistance (Rds On): 5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 80 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 125W
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![2SK2968 900V 10A N-Channel Power MOSFET (TO-3PN Package)]()
2SK2968 900V 10A N-Channel Power MOSFET (TO-3PN Package)
Rs. 149.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 10A
- Drain-Source Resistance (Rds On): 1.25 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
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![IRF644 250V 14A N-Channel Power MOSFET (TO-220 Package)]()
IRF644 250V 14A N-Channel Power MOSFET (TO-220 Package)
Rs. 99.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 14A
- Drain-Source Resistance (Rds On): 0.28 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 68 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 125W