MOSFET

Showing 1–12 of 105 results

  • IRF440 500V 8.8A N-Channel Power MOSFET (TO-247 Package)
    Rs. 119.00

    Specification:-

    • Drain-Source Breakdown Voltage min : 500V
    • Temperature Coefficient type : 0.78V/°C
    • Gate-Source Threshold Voltage min : 2.0V
    • Gate-Source Threshold Voltage max : 4.0V
    • Gate-Source Leakage max : +100nA
    • Drain-Source On-State Resistance : 0.85Ω
    • Forward Transconductance min : 5.3S

  • IRF740 400V 10A N-Channel Power MOSFET (TO-220 Package)
    Rs. 49.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 400V
    • Continuous Drain Current (Id): 10A
    • Drain-Source Resistance (Rds On): 0.54 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 53 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 134W
  • IRFP264N 250V 44A N-Channel Power MOSFET (TO-247 Package)
    Rs. 148.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): 250V
    • Continuous Drain Current (Id): 44A
    • Drain-Source Resistance (Rds On): 0.06 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 210 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 380W
  • P30NF10/STP30NF10 100V 35A N-Channel Power MOSFET (TO-220 Package)
    Rs. 39.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 100V
    • Continuous Drain Current (Id): 35A
    • Drain-Source Resistance (Rds On): 0.045 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 55 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 115W

  • IRFP4568 150V 171A N-Channel Power MOSFET (TO-247 Package)
    Rs. 469.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 150V
    • Continuous Drain Current (Id): 171A
    • Drain-Source Resistance (Rds On): 5.9mOhms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 227 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 517W
  • IRF9640 200V 11A P-Channel Power MOSFET (TO-220 Package)
    Rs. 89.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): -200V
    • Continuous Drain Current (Id): -11A
    • Drain-Source Resistance (Rds On): 0.5Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 44 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 125W
  • 2SK1317 1500V 2.5A N-Channel Power MOSFET (TO-3P Package)
    Rs. 519.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 1500V
    • Collector Current (Ic): 2.5A
    • Drain-Source Resistance (Rds On): 12Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Configuration: Single
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 100W
  • IRFP260N 200V 50A N-Channel Power MOSFET (TO-247 Package)
    Rs. 89.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 200V
    • Continuous Drain Current (Id): 50A
    • Drain-Source Resistance (Rds On): 0.04 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 234 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 300W
  • FQA69N30 300V N-Channel Power MOSFET
    Rs. 329.00

    Specification:-

    • Type: MOSFET
    • Package: TO-3PN
    • No of leads: 3
    • Gate source voltage: 30V
    • Power dissipation: 310W
    • Drain source voltage: 300V

  • 2SK3878 900V 9A N-Channel Power MOSFET (TO-3P Package)
    Rs. 159.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 900V
    • Continuous Drain Current (Id): 9A
    • Drain-Source Resistance (Rds On): 1Ohms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 60 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 150W

  • 20N60 650V 20.7A N-Channel Power MOSFET (TO-247 Package)
    Rs. 139.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 650V
    • Continuous Drain Current (Id): 20.7A
    • Drain-Source Resistance (Rds On): 190Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 58 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 208W
  • 38N30/FQA38N30 300V 38.4A N-Channel Power MOSFET (TO-3 Package)
    Rs. 229.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 300V
    • Continuous Drain Current (Id): 38.4A
    • Drain-Source Resistance (Rds On): 85mOhms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 120 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 290W