MOSFET
Showing 1–12 of 105 results
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IRF440 500V 8.8A N-Channel Power MOSFET (TO-247 Package)
Rs. 119.00Specification:-
- Drain-Source Breakdown Voltage min : 500V
- Temperature Coefficient type : 0.78V/°C
- Gate-Source Threshold Voltage min : 2.0V
- Gate-Source Threshold Voltage max : 4.0V
- Gate-Source Leakage max : +100nA
- Drain-Source On-State Resistance : 0.85Ω
- Forward Transconductance min : 5.3S
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IRF740 400V 10A N-Channel Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 10A
- Drain-Source Resistance (Rds On): 0.54 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 53 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 134W
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IRFP264N 250V 44A N-Channel Power MOSFET (TO-247 Package)
Rs. 148.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 44A
- Drain-Source Resistance (Rds On): 0.06 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 380W
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P30NF10/STP30NF10 100V 35A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 35A
- Drain-Source Resistance (Rds On): 0.045 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 55 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 115W
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IRFP4568 150V 171A N-Channel Power MOSFET (TO-247 Package)
Rs. 469.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 150V
- Continuous Drain Current (Id): 171A
- Drain-Source Resistance (Rds On): 5.9mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 227 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 517W
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IRF9640 200V 11A P-Channel Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -11A
- Drain-Source Resistance (Rds On): 0.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 44 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 125W
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2SK1317 1500V 2.5A N-Channel Power MOSFET (TO-3P Package)
Rs. 519.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1500V
- Collector Current (Ic): 2.5A
- Drain-Source Resistance (Rds On): 12Ohms
- Gate-Source Voltage (Vgs): 20V
- Configuration: Single
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 100W
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IRFP260N 200V 50A N-Channel Power MOSFET (TO-247 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 50A
- Drain-Source Resistance (Rds On): 0.04 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 234 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 300W
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FQA69N30 300V N-Channel Power MOSFET
Rs. 329.00Specification:-
- Type: MOSFET
- Package: TO-3PN
- No of leads: 3
- Gate source voltage: 30V
- Power dissipation: 310W
- Drain source voltage: 300V
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2SK3878 900V 9A N-Channel Power MOSFET (TO-3P Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 1Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 60 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
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20N60 650V 20.7A N-Channel Power MOSFET (TO-247 Package)
Rs. 139.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 650V
- Continuous Drain Current (Id): 20.7A
- Drain-Source Resistance (Rds On): 190Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 208W
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38N30/FQA38N30 300V 38.4A N-Channel Power MOSFET (TO-3 Package)
Rs. 229.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 300V
- Continuous Drain Current (Id): 38.4A
- Drain-Source Resistance (Rds On): 85mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 120 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 290W