MOSFET
Showing 1–12 of 105 results
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![P80NF55 55V 80A N-Channel Power MOSFET (TO-220 Package)]()
P80NF55 55V 80A N-Channel Power MOSFET (TO-220 Package)
Rs. 69.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 80A
- Drain-Source Resistance (Rds On): 8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 155 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 300W
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![IRFP140N 100V 33A N-Channel Power MOSFET (TO-247 Package)]()
IRFP140N 100V 33A N-Channel Power MOSFET (TO-247 Package)
Rs. 179.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 33A
- Drain-Source Resistance (Rds On): 0.052 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 94 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 140W
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![IRFP054N 55V 81A N-Channel HEXFET Power MOSFET (TO-247 Package)]()
IRFP054N 55V 81A N-Channel HEXFET Power MOSFET (TO-247 Package)
Rs. 199.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 81A
- Drain-Source Resistance (Rds On): 0.012 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 170W
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![IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 169A
- Drain-Source Resistance (Rds On): 5.3mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 260 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W
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![2SK2225 1500V 2A N-Channel Power MOSFET (TO-3PFM Package)]()
2SK2225 1500V 2A N-Channel Power MOSFET (TO-3PFM Package)
Rs. 389.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1500V
- Continuous Drain Current (Id): 2A
- Drain-Source Resistance (Rds On): 12Ohms
- Gate-Source Voltage (Vgs): 20V
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 50W
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![IRF630 200V 9A N-Channel Power MOSFET (TO-220 Package)]()
IRF630 200V 9A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 0.4Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 43 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 74W
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![IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)]()
IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 2.5A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 17 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
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![IRF3415 150V 43A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF3415 150V 43A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 99.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 150V
- Continuous Drain Current (Id): 43A
- Drain-Source Resistance (Rds On): 42mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 200 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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![IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 180A
- Drain-Source Resistance (Rds On): 4.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 370W
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![IRF5305 55V 31A P-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF5305 55V 31A P-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 79.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -55V
- Continuous Drain Current (Id): -31A
- Drain-Source Resistance (Rds On): 60mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 63 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 110W
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![2SK2717 900V 5A N-Channel Power MOSFET (TO-220F Package)]()
2SK2717 900V 5A N-Channel Power MOSFET (TO-220F Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 5A
- Drain-Source Resistance (Rds On): 2.5Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 137 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 45W
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![FDP090N10 100V 75A N-Channel Power Trench MOSFET (TO-220 Package)]()
FDP090N10 100V 75A N-Channel Power Trench MOSFET (TO-220 Package)
Rs. 149.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 75A
- Drain-Source Resistance (Rds On): 9mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 116 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 208W
