MOSFET
Showing 1–12 of 96 results
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![IRFP044N 55V 53A N-Channel HEXFET Power MOSFET (TO-247 Package)]()
IRFP044N 55V 53A N-Channel HEXFET Power MOSFET (TO-247 Package)
Rs. 199.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 53A
- Drain-Source Resistance (Rds On): 0.020 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 61 nC
- Operating Temperature Range: -55 to 175°C
- Power Dissipation (Pd): 120W
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![2SK1120 1000V 8A N-Channel Power MOSFET (TO-3PN Package)]()
2SK1120 1000V 8A N-Channel Power MOSFET (TO-3PN Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Collector Current (Ic): 8A
- Drain-Source Resistance (Rds On): 1.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 120 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
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![IRF9610 200V 1.8A P-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF9610 200V 1.8A P-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -18A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 11 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 20W
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![IRFP4568 150V 171A N-Channel Power MOSFET (TO-247 Package)]()
IRFP4568 150V 171A N-Channel Power MOSFET (TO-247 Package)
Rs. 469.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 150V
- Continuous Drain Current (Id): 171A
- Drain-Source Resistance (Rds On): 5.9mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 227 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 517W
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![FDP090N10 100V 75A N-Channel Power Trench MOSFET (TO-220 Package)]()
FDP090N10 100V 75A N-Channel Power Trench MOSFET (TO-220 Package)
Rs. 149.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 75A
- Drain-Source Resistance (Rds On): 9mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 116 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 208W
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![IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 169A
- Drain-Source Resistance (Rds On): 5.3mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 260 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W
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![IRFBC30 600V 3.6A N-Channel Power MOSFET (TO-220 Package)]()
IRFBC30 600V 3.6A N-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 3.6A
- Drain-Source Resistance (Rds On): 2.2Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 31 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 74W
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![IRFPG50 1000V 6.1A N-Channel Power MOSFET (TO-247 Package)]()
IRFPG50 1000V 6.1A N-Channel Power MOSFET (TO-247 Package)
Rs. 299.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Continuous Drain Current (Id): 6.1A
- Drain-Source Resistance (Rds On): 20Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 190 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 190W
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![IRF5305 55V 31A P-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF5305 55V 31A P-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 79.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -55V
- Continuous Drain Current (Id): -31A
- Drain-Source Resistance (Rds On): 60mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 63 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 110W
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![SKD502T N-Channel Power MOSFET]()
SKD502T N-Channel Power MOSFET
Rs. 49.00Specification:-
- Type of Control Channel: N-Channel
- Maximum Power Dissipation (Pd): 174 W
- Maximum Drain-Source Voltage |Vds|: 85 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 120 A
- Maximum Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 55 nC
- Rise Time (tr): 38.9 nS
- Drain-Source Capacitance (Cd): 1057 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm
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![IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)]()
IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 2.5A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 17 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
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![BS170 60V 500mA N-Channel Small Signal MOSFET (TO-92 Package)]()
BS170 60V 500mA N-Channel Small Signal MOSFET (TO-92 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 60V
- Continuous Drain Current (Id): 500 mA
- Drain-Source Resistance (Rds On): 50Ohms
- Gate-Source Voltage (Vgs): 20V
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 350W