MOSFET
Showing 1–12 of 105 results
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![IRF1404 40V 202A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1404 40V 202A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 99.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 40V
- Continuous Drain Current (Id): 202A
- Drain-Source Resistance (Rds On): 4mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 196 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 333W
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![IRFBG30 400V 5.5A N-Channel Power MOSFET (TO-220 Package)]()
IRFBG30 400V 5.5A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 5.5A
- Drain-Source Resistance (Rds On): 1Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 38 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 74W
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![IRFP254N 250V 23A N-Channel Power MOSFET (TO-247 Package)]()
IRFP254N 250V 23A N-Channel Power MOSFET (TO-247 Package)
Rs. 229.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 23A
- Drain-Source Resistance (Rds On): 125mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 100 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 220W
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![FDP090N10 100V 75A N-Channel Power Trench MOSFET (TO-220 Package)]()
FDP090N10 100V 75A N-Channel Power Trench MOSFET (TO-220 Package)
Rs. 149.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 75A
- Drain-Source Resistance (Rds On): 9mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 116 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 208W
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![IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)]()
IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 2.5A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 17 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
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![IRFP240 200V 20A N-Channel Power MOSFET (TO-247 Package)]()
IRFP240 200V 20A N-Channel Power MOSFET (TO-247 Package)
Rs. 139.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): 20A
- Drain-Source Resistance (Rds On): 0.18 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
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![IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)]()
IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 6.2A
- Drain-Source Resistance (Rds On): 1.2Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 60 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 125W
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![FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)]()
FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)
Rs. 499.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 48A
- Drain-Source Resistance (Rds On): 105mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 137 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 625W
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![IRFP2907 75V 209A N-Channel Power MOSFET (TO-247 Package)]()
IRFP2907 75V 209A N-Channel Power MOSFET (TO-247 Package)
Rs. 499.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 209A
- Drain-Source Resistance (Rds On): 4.5mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 620 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 470W
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![IRF5305 55V 31A P-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF5305 55V 31A P-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 79.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -55V
- Continuous Drain Current (Id): -31A
- Drain-Source Resistance (Rds On): 60mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 63 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 110W
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![2SK2968 900V 10A N-Channel Power MOSFET (TO-3PN Package)]()
2SK2968 900V 10A N-Channel Power MOSFET (TO-3PN Package)
Rs. 149.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 10A
- Drain-Source Resistance (Rds On): 1.25 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
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![IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)]()
IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)
Rs. 139.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Continuous Drain Current (Id): 3.1A
- Drain-Source Resistance (Rds On): 5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 80 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 125W