MOSFET
Showing 1–12 of 105 results
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![IRF9610 200V 1.8A P-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF9610 200V 1.8A P-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -18A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 11 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 20W
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![2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)]()
2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)
Rs. 69.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 6A
- Drain-Source Resistance (Rds On): 1.25 Ohms
- Gate-Source Voltage (Vgs): 3.5V
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 45W
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![IRFP460 500V 20A N-Channel Power MOSFET (TO-247 Package)]()
IRFP460 500V 20A N-Channel Power MOSFET (TO-247 Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 20A
- Drain-Source Resistance (Rds On): 0.024 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 124 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 280W
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![IRFBG30 400V 5.5A N-Channel Power MOSFET (TO-220 Package)]()
IRFBG30 400V 5.5A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 5.5A
- Drain-Source Resistance (Rds On): 1Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 38 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 74W
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![38N30/FQA38N30 300V 38.4A N-Channel Power MOSFET (TO-3 Package)]()
38N30/FQA38N30 300V 38.4A N-Channel Power MOSFET (TO-3 Package)
Rs. 229.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 300V
- Continuous Drain Current (Id): 38.4A
- Drain-Source Resistance (Rds On): 85mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 120 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 290W
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![SKD502T N-Channel Power MOSFET]()
SKD502T N-Channel Power MOSFET
Rs. 49.00Specification:-
- Type of Control Channel: N-Channel
- Maximum Power Dissipation (Pd): 174 W
- Maximum Drain-Source Voltage |Vds|: 85 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 120 A
- Maximum Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 55 nC
- Rise Time (tr): 38.9 nS
- Drain-Source Capacitance (Cd): 1057 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm
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![IRFP260N 200V 50A N-Channel Power MOSFET (TO-247 Package)]()
IRFP260N 200V 50A N-Channel Power MOSFET (TO-247 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 50A
- Drain-Source Resistance (Rds On): 0.04 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 234 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 300W
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![IRF640 200V 18A N-Channel Power MOSFET (TO-220 Package)]()
IRF640 200V 18A N-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 18A
- Drain-Source Resistance (Rds On): 0.15 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
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![BS170 60V 500mA N-Channel Small Signal MOSFET (TO-92 Package)]()
BS170 60V 500mA N-Channel Small Signal MOSFET (TO-92 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 60V
- Continuous Drain Current (Id): 500 mA
- Drain-Source Resistance (Rds On): 50Ohms
- Gate-Source Voltage (Vgs): 20V
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 350W
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![IRFP450 500V 14A N-Channel Power MOSFET (TO-247 Package)]()
IRFP450 500V 14A N-Channel Power MOSFET (TO-247 Package)
Rs. 119.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 14A
- Drain-Source Resistance (Rds On): 370mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 77 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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![20N60 650V 20.7A N-Channel Power MOSFET (TO-247 Package)]()
20N60 650V 20.7A N-Channel Power MOSFET (TO-247 Package)
Rs. 139.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 650V
- Continuous Drain Current (Id): 20.7A
- Drain-Source Resistance (Rds On): 190Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 208W
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![IRFPG50 1000V 6.1A N-Channel Power MOSFET (TO-247 Package)]()
IRFPG50 1000V 6.1A N-Channel Power MOSFET (TO-247 Package)
Rs. 299.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Continuous Drain Current (Id): 6.1A
- Drain-Source Resistance (Rds On): 20Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 190 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 190W