MOSFET
Showing 1–12 of 105 results
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![IRFP450 500V 14A N-Channel Power MOSFET (TO-247 Package)]()
IRFP450 500V 14A N-Channel Power MOSFET (TO-247 Package)
Rs. 119.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 14A
- Drain-Source Resistance (Rds On): 370mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 77 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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![2SK1317 1500V 2.5A N-Channel Power MOSFET (TO-3P Package)]()
2SK1317 1500V 2.5A N-Channel Power MOSFET (TO-3P Package)
Rs. 519.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1500V
- Collector Current (Ic): 2.5A
- Drain-Source Resistance (Rds On): 12Ohms
- Gate-Source Voltage (Vgs): 20V
- Configuration: Single
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 100W
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![38N30/FQA38N30 300V 38.4A N-Channel Power MOSFET (TO-3 Package)]()
38N30/FQA38N30 300V 38.4A N-Channel Power MOSFET (TO-3 Package)
Rs. 229.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 300V
- Continuous Drain Current (Id): 38.4A
- Drain-Source Resistance (Rds On): 85mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 120 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 290W
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![IRF510 100V 5.6A N-Channel Power MOSFET (TO-220 Package)]()
IRF510 100V 5.6A N-Channel Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 5.6A
- Drain-Source Resistance (Rds On): 540mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 8.3 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 43W
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![BS170 60V 500mA N-Channel Small Signal MOSFET (TO-92 Package)]()
BS170 60V 500mA N-Channel Small Signal MOSFET (TO-92 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 60V
- Continuous Drain Current (Id): 500 mA
- Drain-Source Resistance (Rds On): 50Ohms
- Gate-Source Voltage (Vgs): 20V
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 350W
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![2SK3878 900V 9A N-Channel Power MOSFET (TO-3P Package)]()
2SK3878 900V 9A N-Channel Power MOSFET (TO-3P Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 1Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 60 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
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![IRF2807 75V 82A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF2807 75V 82A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 82A
- Drain-Source Resistance (Rds On): 13mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 160 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 230W
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![IRFPG50 1000V 6.1A N-Channel Power MOSFET (TO-247 Package)]()
IRFPG50 1000V 6.1A N-Channel Power MOSFET (TO-247 Package)
Rs. 299.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Continuous Drain Current (Id): 6.1A
- Drain-Source Resistance (Rds On): 20Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 190 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 190W
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![IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 130A
- Drain-Source Resistance (Rds On): 7.8mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 250 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W
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![IRF840 500V 8A N-Channel Power MOSFET (TO-220 Package)]()
IRF840 500V 8A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 8A
- Drain-Source Resistance (Rds On): 850mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 39 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 125W
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![IRF4905 55V 74A P-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF4905 55V 74A P-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 74A
- Drain-Source Resistance (Rds On): 20mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 180 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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![2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)]()
2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)
Rs. 69.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 6A
- Drain-Source Resistance (Rds On): 1.25 Ohms
- Gate-Source Voltage (Vgs): 3.5V
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 45W
