MOSFET

Showing 1–12 of 105 results

  • IRFP450 500V 14A N-Channel Power MOSFET (TO-247 Package)
    Rs. 119.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 500V
    • Continuous Drain Current (Id): 14A
    • Drain-Source Resistance (Rds On): 370mOhms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 77 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 200W
  • 2SK3878 900V 9A N-Channel Power MOSFET (TO-3P Package)
    Rs. 159.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 900V
    • Continuous Drain Current (Id): 9A
    • Drain-Source Resistance (Rds On): 1Ohms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 60 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 150W

  • IRF1404 40V 202A N-Channel HEXFET Power MOSFET (TO-220 Package)
    Rs. 99.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 40V
    • Continuous Drain Current (Id): 202A
    • Drain-Source Resistance (Rds On): 4mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 196 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 333W
  • FQA69N30 300V N-Channel Power MOSFET
    Rs. 329.00

    Specification:-

    • Type: MOSFET
    • Package: TO-3PN
    • No of leads: 3
    • Gate source voltage: 30V
    • Power dissipation: 310W
    • Drain source voltage: 300V

  • 2SK962 900V 8A N-Channel Silicon Power MOSFET (TO-3P Package)
    Rs. 199.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 900V
    • Continuous Drain Current (Id): 8A
    • Drain-Source Resistance (Rds On): 20Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 150W
  • IRF510 100V 5.6A N-Channel Power MOSFET (TO-220 Package)
    Rs. 49.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 100V
    • Continuous Drain Current (Id): 5.6A
    • Drain-Source Resistance (Rds On): 540mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 8.3 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 43W
  • IRFP250N 200V 30A N-Channel Power MOSFET (TO-247 Package)
    Rs. 79.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 200V
    • Continuous Drain Current (Id): 30A
    • Drain-Source Resistance (Rds On): 0.075 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 123 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 214W

  • 2SK3569 600V 10A N-Channel Power MOSFET (TO-220F Package)
    Rs. 99.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 600V
    • Continuous Drain Current (Id): 10A
    • Drain-Source Resistance (Rds On): 0.54 Ohms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 42 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 45W

  • IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)
    Rs. 89.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 75V
    • Continuous Drain Current (Id): 130A
    • Drain-Source Resistance (Rds On): 7.8mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 250 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 330W

  • IRF2807 75V 82A N-Channel HEXFET Power MOSFET (TO-220 Package)
    Rs. 59.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 75V
    • Continuous Drain Current (Id): 82A
    • Drain-Source Resistance (Rds On): 13mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 160 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 230W
  • BS170 60V 500mA N-Channel Small Signal MOSFET (TO-92 Package)
    Rs. 29.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 60V
    • Continuous Drain Current (Id): 500 mA
    • Drain-Source Resistance (Rds On): 50Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 350W
  • IRF9640 200V 11A P-Channel Power MOSFET (TO-220 Package)
    Rs. 89.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): -200V
    • Continuous Drain Current (Id): -11A
    • Drain-Source Resistance (Rds On): 0.5Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 44 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 125W