MOSFET
Showing 1–12 of 96 results
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IRF9640 200V 11A P-Channel Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -11A
- Drain-Source Resistance (Rds On): 0.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 44 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 125W
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23N50E N-Channel Silicon Power MOSFET
Rs. 149.00Specification:-
- Type: MOSFET
- Voltage: 500V
- Drain Current: 23A
- Reverse Recovery change: 8Micro C
- Gate source voltage: 30V
- Total power dissipation: 315W
- Operating and Storage Temperature Range: -55°C TO 150°C
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IRFP22N60K 600V 22A N-Channel Power MOSFET (TO-247 Package)
Rs. 289.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 22A
- Drain-Source Resistance (Rds On): 0.28 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 150 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 370W
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IRF610 200V 3.3A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 3.3A
- Drain-Source Resistance (Rds On): 1.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 8.2 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 36W
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2SK2717 900V 5A N-Channel Power MOSFET (TO-220F Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 5A
- Drain-Source Resistance (Rds On): 2.5Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 137 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 45W
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2SK2698 500V 15A N-Channel Power MOSFET (TO-3PN Package)
Rs. 149.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 15A
- Drain-Source Resistance (Rds On): 0.35 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 150W
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IRF644 250V 14A N-Channel Power MOSFET (TO-220 Package)
Rs. 99.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 14A
- Drain-Source Resistance (Rds On): 0.28 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 68 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 125W
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IRFP140N 100V 33A N-Channel Power MOSFET (TO-247 Package)
Rs. 179.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 33A
- Drain-Source Resistance (Rds On): 0.052 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 94 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 140W
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IRFP460 500V 20A N-Channel Power MOSFET (TO-247 Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 20A
- Drain-Source Resistance (Rds On): 0.024 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 124 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 280W
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IRFP2907 75V 209A N-Channel Power MOSFET (TO-247 Package)
Rs. 499.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 209A
- Drain-Source Resistance (Rds On): 4.5mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 620 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 470W
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IRFP054N 55V 81A N-Channel HEXFET Power MOSFET (TO-247 Package)
Rs. 199.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 81A
- Drain-Source Resistance (Rds On): 0.012 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 170W
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2SK2611 900V 9A N-Channel Power MOSFET (TO-3PN Package)
Rs. 119.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 1.1Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W