MOSFET

Showing 1–12 of 96 results

  • IRF9640 200V 11A P-Channel Power MOSFET (TO-220 Package)
    Rs. 89.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: P-Channel
    • Drain-Source Breakdown Voltage (Vds): -200V
    • Continuous Drain Current (Id): -11A
    • Drain-Source Resistance (Rds On): 0.5Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 44 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 125W
  • 23N50E N-Channel Silicon Power MOSFET
    Rs. 149.00

    Specification:-

    • Type: MOSFET
    • Voltage: 500V
    • Drain Current: 23A
    • Reverse Recovery change: 8Micro C
    • Gate source voltage: 30V
    • Total power dissipation: 315W
    • Operating and Storage Temperature Range: -55°C TO 150°C
  • IRFP22N60K 600V 22A N-Channel Power MOSFET (TO-247 Package)
    Rs. 289.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 600V
    • Continuous Drain Current (Id): 22A
    • Drain-Source Resistance (Rds On): 0.28 Ohms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 150 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 370W
  • IRF610 200V 3.3A N-Channel Power MOSFET (TO-220 Package)
    Rs. 39.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 200V
    • Continuous Drain Current (Id): 3.3A
    • Drain-Source Resistance (Rds On): 1.5Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 8.2 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 36W
  • 2SK2717 900V 5A N-Channel Power MOSFET (TO-220F Package)
    Rs. 89.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 900V
    • Continuous Drain Current (Id): 5A
    • Drain-Source Resistance (Rds On): 2.5Ohms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 137 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 45W
  • 2SK2698 500V 15A N-Channel Power MOSFET (TO-3PN Package)
    Rs. 149.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 500V
    • Continuous Drain Current (Id): 15A
    • Drain-Source Resistance (Rds On): 0.35 Ohms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 58 nC
    • Operating Temperature Range: -55 to 150°C
    • Power Dissipation (Pd): 150W
  • IRF644 250V 14A N-Channel Power MOSFET (TO-220 Package)
    Rs. 99.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 250V
    • Continuous Drain Current (Id): 14A
    • Drain-Source Resistance (Rds On): 0.28 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 68 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 125W
  • IRFP140N 100V 33A N-Channel Power MOSFET (TO-247 Package)
    Rs. 179.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 100V
    • Continuous Drain Current (Id): 33A
    • Drain-Source Resistance (Rds On): 0.052 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 94 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 140W
  • IRFP460 500V 20A N-Channel Power MOSFET (TO-247 Package)
    Rs. 159.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 500V
    • Continuous Drain Current (Id): 20A
    • Drain-Source Resistance (Rds On): 0.024 Ohms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 124 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 280W
  • IRFP2907 75V 209A N-Channel Power MOSFET (TO-247 Package)
    Rs. 499.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 75V
    • Continuous Drain Current (Id): 209A
    • Drain-Source Resistance (Rds On): 4.5mOhms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 620 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 470W
  • IRFP054N 55V 81A N-Channel HEXFET Power MOSFET (TO-247 Package)
    Rs. 199.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 55V
    • Continuous Drain Current (Id): 81A
    • Drain-Source Resistance (Rds On): 0.012 Ohms
    • Gate-Source Voltage (Vgs): 20V
    • Gate Charge (Qg): 130 nC
    • Operating Temperature Range: -55 – 175°C
    • Power Dissipation (Pd): 170W
  • 2SK2611 900V 9A N-Channel Power MOSFET (TO-3PN Package)
    Rs. 119.00

    Specification:-

    • Number of Channels: 1 Channel
    • Transistor Polarity: N-Channel
    • Drain-Source Breakdown Voltage (Vds): 900V
    • Continuous Drain Current (Id): 9A
    • Drain-Source Resistance (Rds On): 1.1Ohms
    • Gate-Source Voltage (Vgs): 30V
    • Gate Charge (Qg): 58 nC
    • Operating Temperature Range: -55 – 150°C
    • Power Dissipation (Pd): 150W