MOSFET
Showing 1–12 of 105 results
-
![IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 130A
- Drain-Source Resistance (Rds On): 7.8mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 250 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W
-
![BSS138 50V N-Channel Enhancement Mode MOSFET]()
BSS138 50V N-Channel Enhancement Mode MOSFET
Rs. 29.00Specification:-
- Drain-Source Voltage: 50 V
- Gate-Source Voltage: ± 20 V
- Drain Current Continuous: 200 mA
- Drain Current Pulsed (tp≤10µS): 800 mA
- Drain Power Dissipation: 225 mW
- Thermal Resistance, Junction to Ambient: 556°C/W
- Storage Temperature Range: -55 to +150 °C
-
![IRFP240 200V 20A N-Channel Power MOSFET (TO-247 Package)]()
IRFP240 200V 20A N-Channel Power MOSFET (TO-247 Package)
Rs. 139.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): 20A
- Drain-Source Resistance (Rds On): 0.18 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
-
![2SK2225 1500V 2A N-Channel Power MOSFET (TO-3PFM Package)]()
2SK2225 1500V 2A N-Channel Power MOSFET (TO-3PFM Package)
Rs. 389.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1500V
- Continuous Drain Current (Id): 2A
- Drain-Source Resistance (Rds On): 12Ohms
- Gate-Source Voltage (Vgs): 20V
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 50W
-
![IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 169A
- Drain-Source Resistance (Rds On): 5.3mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 260 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W
-
![IRF1404 40V 202A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1404 40V 202A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 99.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 40V
- Continuous Drain Current (Id): 202A
- Drain-Source Resistance (Rds On): 4mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 196 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 333W
-
![IRF530 100V 17A N-Channel Power MOSFET (TO-220 Package)]()
IRF530 100V 17A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 17A
- Drain-Source Resistance (Rds On): 90mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 37 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 70W
-
![IRFBE30 800V 4.1A N-Channel Power MOSFET (TO-220 Package)]()
IRFBE30 800V 4.1A N-Channel Power MOSFET (TO-220 Package)
Rs. 119.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 800V
- Continuous Drain Current (Id): 4.1A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 78 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 125W
-
![IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 180A
- Drain-Source Resistance (Rds On): 4.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 370W
-
![IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)]()
IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 6.2A
- Drain-Source Resistance (Rds On): 1.2Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 60 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 125W
-
![IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)]()
IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 2.5A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 17 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
-
![IRF9610 200V 1.8A P-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF9610 200V 1.8A P-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -18A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 11 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 20W