MOSFET
Showing 1–12 of 96 results
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![38N30/FQA38N30 300V 38.4A N-Channel Power MOSFET (TO-3 Package)]()
38N30/FQA38N30 300V 38.4A N-Channel Power MOSFET (TO-3 Package)
Rs. 229.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 300V
- Continuous Drain Current (Id): 38.4A
- Drain-Source Resistance (Rds On): 85mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 120 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 290W
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![IRF1010 60V 84A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1010 60V 84A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 60V
- Continuous Drain Current (Id): 84A
- Drain-Source Resistance (Rds On): 12mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 200W
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![FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)]()
FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)
Rs. 499.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 48A
- Drain-Source Resistance (Rds On): 105mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 137 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 625W
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![IRFBE30 800V 4.1A N-Channel Power MOSFET (TO-220 Package)]()
IRFBE30 800V 4.1A N-Channel Power MOSFET (TO-220 Package)
Rs. 119.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 800V
- Continuous Drain Current (Id): 4.1A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 78 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 125W
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![IRF640 200V 18A N-Channel Power MOSFET (TO-220 Package)]()
IRF640 200V 18A N-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 18A
- Drain-Source Resistance (Rds On): 0.15 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
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![2SK3878 900V 9A N-Channel Power MOSFET (TO-3P Package)]()
2SK3878 900V 9A N-Channel Power MOSFET (TO-3P Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 1Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 60 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
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![IRF3415 150V 43A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF3415 150V 43A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 99.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 150V
- Continuous Drain Current (Id): 43A
- Drain-Source Resistance (Rds On): 42mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 200 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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![2SK2968 900V 10A N-Channel Power MOSFET (TO-3PN Package)]()
2SK2968 900V 10A N-Channel Power MOSFET (TO-3PN Package)
Rs. 149.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 10A
- Drain-Source Resistance (Rds On): 1.25 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
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![IRF9630 200V 6.5A P-Channel Power MOSFET (TO-220 Package)]()
IRF9630 200V 6.5A P-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -6.5A
- Drain-Source Resistance (Rds On): 0.80 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 29 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 74W
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![2SK1317 1500V 2.5A N-Channel Power MOSFET (TO-3P Package)]()
2SK1317 1500V 2.5A N-Channel Power MOSFET (TO-3P Package)
Rs. 519.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1500V
- Collector Current (Ic): 2.5A
- Drain-Source Resistance (Rds On): 12Ohms
- Gate-Source Voltage (Vgs): 20V
- Configuration: Single
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 100W
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![IRF1404 40V 202A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1404 40V 202A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 99.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 40V
- Continuous Drain Current (Id): 202A
- Drain-Source Resistance (Rds On): 4mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 196 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 333W
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![IRF9Z34 60V 18A P-Channel Power MOSFET (TO-220 Package)]()
IRF9Z34 60V 18A P-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -60V
- Continuous Drain Current (Id): -18A
- Drain-Source Resistance (Rds On): 0.14 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 34 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 88W