MOSFET
Showing 1–12 of 105 results
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![IRF1010 60V 84A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1010 60V 84A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 60V
- Continuous Drain Current (Id): 84A
- Drain-Source Resistance (Rds On): 12mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 200W
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![IRFP9240 200V 12A P-Channel Power MOSFET TO-247 Package]()
IRFP9240 200V 12A P-Channel Power MOSFET TO-247 Package
Rs. 199.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -12A
- Drain-Source Resistance (Rds On): 500mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 44 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
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![IRF9Z24 60V 11A P-Channel Power MOSFET (TO-220 Package)]()
IRF9Z24 60V 11A P-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -60V
- Continuous Drain Current (Id): -11A
- Drain-Source Resistance (Rds On): 0.28 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 19 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 60W
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![IRFPG50 1000V 6.1A N-Channel Power MOSFET (TO-247 Package)]()
IRFPG50 1000V 6.1A N-Channel Power MOSFET (TO-247 Package)
Rs. 299.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Continuous Drain Current (Id): 6.1A
- Drain-Source Resistance (Rds On): 20Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 190 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 190W
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![IRF1404 40V 202A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1404 40V 202A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 99.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 40V
- Continuous Drain Current (Id): 202A
- Drain-Source Resistance (Rds On): 4mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 196 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 333W
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![IRFB4321 150V 85A N-Channel Power MOSFET (TO-220 Package)]()
IRFB4321 150V 85A N-Channel Power MOSFET (TO-220 Package)
Rs. 229.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 150V
- Continuous Drain Current (Id): 85A
- Drain-Source Resistance (Rds On): 15mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 110 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 350W
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![2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)]()
2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)
Rs. 69.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 6A
- Drain-Source Resistance (Rds On): 1.25 Ohms
- Gate-Source Voltage (Vgs): 3.5V
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 45W
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![IRFP054N 55V 81A N-Channel HEXFET Power MOSFET (TO-247 Package)]()
IRFP054N 55V 81A N-Channel HEXFET Power MOSFET (TO-247 Package)
Rs. 199.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 81A
- Drain-Source Resistance (Rds On): 0.012 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 170W
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![IRF9630 200V 6.5A P-Channel Power MOSFET (TO-220 Package)]()
IRF9630 200V 6.5A P-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -6.5A
- Drain-Source Resistance (Rds On): 0.80 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 29 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 74W
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![IRFP140N 100V 33A N-Channel Power MOSFET (TO-247 Package)]()
IRFP140N 100V 33A N-Channel Power MOSFET (TO-247 Package)
Rs. 179.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 33A
- Drain-Source Resistance (Rds On): 0.052 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 94 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 140W
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![2SK962 900V 8A N-Channel Silicon Power MOSFET (TO-3P Package)]()
2SK962 900V 8A N-Channel Silicon Power MOSFET (TO-3P Package)
Rs. 199.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 8A
- Drain-Source Resistance (Rds On): 20Ohms
- Gate-Source Voltage (Vgs): 20V
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
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![IRF640 200V 18A N-Channel Power MOSFET (TO-220 Package)]()
IRF640 200V 18A N-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 18A
- Drain-Source Resistance (Rds On): 0.15 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
